AP400N08MP APME | Alldatasheet

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80V N-Channel Enhancement Mode MOSFET AP400N08MP REV1.0 永源微電子科技有限公司

Description

The AP400N08MP uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 80V ID =400A RDS(ON) < 1.5mΩ VGS=10V （Type：1.2mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP400N08MP TO-247-3L AP400N08MP XXX YYYY 330 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 400 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 253 A IDM Pulsed Drain Current 1600 A EAS Single Pulse Avalanche Energy 2258 mJ PD@TC=25℃ Total Power Dissipation4 469 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-Ambient 62.5 ℃/W RθJC Thermal Resistance Junction-Case 0.32 ℃/W

80V N-Channel Enhancement Mode MOSFET AP400N08MP REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 80 90 - V lGSS Gate-body Leakage current VDS = 0V, VGS = ±20V - - ±100 nA IDSS Zero Gate Voltage Drain Current TJ=25°C VDS = 80V, VGS = 0V - - 1 μA Zero Gate Voltage Drain Current TJ=100°C - - 100 VGS(th) Gate-Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V RDS(on) Drain-Source on-Resistance4 VGS = 10V, ID = 20A - 1.2 1.5 mΩ gfs Forward Transconductance4 VDS=10V, ID=20A - 62 - S Ciss Input Capacitance VDS = 40V, VGS =0V, f =1MHz - 13085 - pF Coss Output Capacitance - 2615 - Crss Reverse Transfer Capacitance - 120 - Rg Gate Resistance f =1MHz - 3.1 - Ω Qg Total Gate Charge VGS = 10V, VDS = 40V, ID=20A - 243.6 - nC Qgs Gate-Source Charge - 64.2 - Qgd Gate-Drain Charge - 58.8 - td(on) Turn-on Delay Time VGS =10V, VDD =40V, RG = 3Ω, ID= 20A - 44.8 - ns tr Rise Time - 86.8 - td(off) Turn-off Delay Time - 164 - tf Fall Time - 94 - trr Body Diode Reverse Recovery Time IF = 20A, dI/dt=100A/µs - 128 - ns Qrr Body Diode Reverse Recovery Charge - 140.8 - nC VSD Diode Forward Voltage4 IS = 20A, VGS = 0V - - 1.2 V IS Continuous Source Current TC=25°C 400 A Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=64VGS=10V,L=0.1mH,IAS=80A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

80V N-Channel Enhancement Mode MOSFET AP400N08MP RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-247-3L Dim. Min. Max. A 15.0 16. 0 B 20.0 21.0 C 41.0 42.0 D 5.0 6.0 E 4.0 5.0 F 2.5 3.5 G 1.75 2.5 H 3.0 3.5 I 8.0 10.0 J 4.9 5.1 K 1.9 2.1 L 3.5 4.0 M 4.75 5.25 N 2.0 3.0 O 0.55 0.75 P Typ 5.08 Q 1.2 1.3

80V N-Channel Enhancement Mode MOSFET AP400N08MP REV1.0 永源微電子科技有限公司

80V N-Channel Enhancement Mode MOSFET AP400N08MP RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2022/10/31 Initial release