AP3N80DY APME | Alldatasheet
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800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司
Description
The AP3N80D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 800V ID =3.0 RDS(ON) < 5.8Ω @ VGS=10V （Type：4.8Ω） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3N80D TO-252-3L AP3N80D XXX YYYY 2500 AP3N80Y TO-251S-3L AP3N80Y XXX YYYY 4000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 800 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Drain Current, VGS @ 10V 3.0 A IDM Pulsed Drain Current1 9.0 A PD@TC=25℃ Total Power Dissipation 97 W EAS Single Pulse Avalanche Energy4 210 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rthj-c Maximum Thermal Resistance, Junction-case 1.18 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Units BVDSS Drain-source Breakdown Voltage VGS=0V, ID=250UA 800 870 V VGS(TH) Gate Threshold Voltage VGS=VDS, ID=250uA 3.0 4.0 5.0 V IDSS Drain-source Leakage Current VDS=800V, VGS=0V, Tj=25℃ 1 uA VDS=640V, VGS=0V, Tj=125℃ 10 uA gfs Forward Transconductance VDS=15V, ID=2.0A 2.5 S IGSS Gate-body Leakage Current VGS =±30V ±100 nA RDS(ON) Static Drain-source On Resistance VGS=10V, ID=2.0A 4.8 5.5 Ω Ciss Input Capacitance VGS=0V, VDS=25V F=1.0MHZ 530 pF Coss Output Capacitance 57 pF Crss Reverse transfer Capacitance 7.0 pF Td(on) Turn-on Delay Time VDD=400V, ID =3.0A RG=25Ω 15 ns Tr Rise Time 40 ns Td(off) Turn -Off Delay Time 30 ns Tf Fall Time 30 ns Qg Total Gate Charge ID=3.0A, VDS=640V VGS=10V 15 nC Qgs Gate-to-Source Charge 3.5 nC Qgd Gate-to-Drain Charge 7.7 nC IS Continuous Diode Forward Current 3.0 A VSD Diode Forward Voltage Tj=25°C, Is=3.0A VGS =0V 1.4 V trr Reverse Recovery Time Tj=25°C, If=3.0A di/dt=100A/μs 530 ns Qrr Reverse Recovery Charge 2.8 uC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司 Typical Characteristics Figure3. Drain Current vs. Temperature Figure4. BVDSS Variation vs. Temperature
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司 Package Mechanical Data-TO-252-3L Symbol Dim in mm Min Typ Max A 2.1 2.3 2.5 A1 0 0.064 0.128 b 0.64 0.75 0.86 c 0.45 0.52 0.6 D 6.4 6.6 6.8 D1 5.33REF D2 4.83REF D3 5.25REF E 5.9 6.1 6.3 e 2.286TYP L 9.8 10.1 10.4 L1 2.888REF L2 1.4 1.5 1.7 L3 1.65REF L4 0.6 0.8 1 ϕ 1.1 1.2 1.3 θ 0° 10° θ1 5° 10° θ2 5° 10°
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司 Package Mechanical Data-TO-251S-3L Symbol Dim in mm Mim Nom Max A 2.2 2.3 2.4 A1 0.9 1.0 1.1 b 0.66 0.76 0.86 C 0.46 0.52 0.58 D 6.50 6.6 6.7 D1 5.15 5.3 5.45 D2 4.6 4.8 4.95 E 10.4 ---- 11.5 E1 6.0 6.1 6.2 E2 5.400REF e 2.286BSC L 3.5 4.0 4.3 L1 0.9 --- 1.27 L2 1.4 --- 1.9
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
800V N-Channel Enhancement Mode MOSFET AP3N80D/Y REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2023/6/31 Initial release