AP3N20SI APME | Alldatasheet
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180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司
Description
The AP3N20SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 180V ID =3A RDS(ON) < 1800mΩ @ VGS=10V （Type：1300mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3N20SI SOT89-3L AP3N20SI XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 180 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Drain Current, VGS @ 10V 3.0 A ID@TC=100℃ Drain Current, VGS @ 10V 2.1 A IDM Pulsed Drain Current1 10 A PD@TC=25℃ Total Power Dissipation 2 W PD@TA=25℃ Total Power Dissipation3 1.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Maximum Thermal Resistance, Junctionambient 85 ℃/W RθJC Maximum Thermal Resistance, Junction-case 40 ℃/W
180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 180 195 - V IDSS Zero Gate Voltage Drain Current VDS=200V,VGS=0V - - 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V - - ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 2.0 2.8 3.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2A - 1300 1800 mΩ gFS Forward Transconductance VDS=15V,ID=2A - 8 - S Clss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz - 580 - PF Coss Output Capacitance - 90 - PF Crss Reverse Transfer Capacitance - 3 - PF td(on) Turn-on Delay Time VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω - 10 - nS tr Turn-on Rise Time - 12 - nS td(off) Turn-Off Delay Time - 15 - nS tf Turn-Off Fall Time - 15 - nS Qg Total Gate Charge VDS=100V,ID=2A, VGS=10V - 12 nC Qgs Gate-Source Charge - 2.5 - nC Qgd Gate-Drain Charge - 3.8 - nC VSD Diode Forward Voltage (Note 3) VGS=0V,IS=2A - - 1.2 V IS Diode Forward Current (Note 2) - - 2 A Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司 Typical Characteristics Figure1：Output Characteristics Figure4：Rdson-JunctionTemperature Figure 3：Transfer Characteristics Figure4：Gate Charge Figure5：Rdson-Drain Current Figure6：Source- Drain Diode Forward
180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司 Figure7：Capacitance vs Vds Figure9：BVDSS vs Junction Temperature Figure 8：Safe Operation Area Figure10：VGS(th) vs Junction Temperature Figure11：Normalized Maximum Transient Thermal Impedance
180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司
180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
180V N-Channel Enhancement Mode MOSFET AP3N20SI RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2019/10/29 Initial release