AP3801GM-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-5.1A,RDS(ON)<55mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -5.1 AContinuous Drain Current-TC=100℃ --- Pulsed Drain Current1 -20 PD Power Dissipation4 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient2 50 D D D S D S G All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -30 -33 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-24V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1 -1.6 -3 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-5.1A --- 43 55 mΩ VGS=-4.5V,ID=-4.2A --- 62 90 GFS Forward Transconductance VDS =-15V, ID=-5.1A 4 7 --- S Dynamic Characteristics4 Ciss Input Capacitance --- 980 --- Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz --- 390 --- pF Crss Reverse Transfer Capacitance --- 135 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=-15V, ID=-1A, RGEN=6 Ω --- 14 --- ns tr Rise Time --- 12 --- ns td(off) Turn-Off Delay Time --- 56 --- ns tf Fall Time --- 20 --- ns Qg Total Gate Charge --- 11 --- nC Qgs Gate-Source Charge VGS=-10V, VDS=-15V, --- 2 --- nC Qgd Gate-Drain “Miller” Charge ID=-5.1A --- 2.8 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-5.1A --- --- -1.2 V All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject toproduction. Typical Characteristics： (TC=25℃ unless otherwise noted) All d ata sheet.com
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