AP3439DW

AP3439DW APME | Alldatasheet

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20V N+P-Channel Enhancement Mode MOSFET AP3439DW REV1.0 永源微電子科技有限公司

Description

The AP3439DW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =0.9A RDS(ON) < 250mΩ @ VGS=10V （Type：135mΩ） VDS = -20V ID =-0.8A RDS(ON) < 350mΩ @ VGS=-10V（Type：290mΩ） ESD=1.6KV HBM Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3439DW SOT363-6L AP6G02BF XXX YYYY 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 20 -20 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 0.9 -0.8 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 0.6 -0.3 A IDM Pulsed Drain Current2 3.6 --4.0 A PD@TA=25℃ Total Power Dissipation4 0.23 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 833 ℃/W

20V N+P-Channel Enhancement Mode MOSFET AP3439DW REV1.0 永源微電子科技有限公司 N-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 23 - V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V, - - 1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±10V - - ±10 uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 0.7 1.2 V RDS(on) Static Drain-Source on-Resistance note2 VGS=4.5V, ID=0.5A - 135 250 mΩ VGS=2.5V, ID=0.4A - 195 280 Ciss Input Capacitance VDS=10V, VGS=0V, f=1.0MHz - 60 - pF Coss Output Capacitance - 22 - pF Crss Reverse Transfer Capacitance - 12 - pF Qg Total Gate Charge VDS=10V, ID=0.9A, VGS=4.5V - 1 - nC Qgs Gate-Source Charge - 0.28 - nC Qgd Gate-Drain(“Miller”) Charge - 0.22 - nC td(on) Turn-on Delay Time VDS=10V, ID=0.5A, RGEN=10Ω, VGS=4.5V - 2 - ns tr Turn-on Rise Time - 19 - ns td(off) Turn-off Delay Time - 10 - ns tf Turn-off Fall Time - 23 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - 0.9 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 3.6 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS=0.9A - - 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

20V N+P-Channel Enhancement Mode MOSFET AP3439DW REV1.0 永源微電子科技有限公司 P-Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA -20 - - V IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V, - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±12V - - ±100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID= -250μA -0.4 -0.7 -1.0 V RDS(on) Static Drain-Source on-Resistance VGS =-4.5V, ID =-2A - 290 350 mΩ VGS =-2.5V, ID =-1A - 380 500 Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz - 54 - pF Coss Output Capacitance - 11 - pF Crss Reverse Transfer Capacitance - 25 - pF td(on) Turn-on Delay Time VDD = -10V, RL=5Ω, RGEN=3Ω,VGS=-4.5V, - 6.7 - ns tr Turn-on Rise Time - 4.8 - ns td(off) Turn-off Delay Time - 17.3 - ns tf Turn-off Fall Time - 7.4 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - -0.8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -4.0 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = -0.8A - - -1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

20V N+P-Channel Enhancement Mode MOSFET AP3439DW REV1.0 永源微電子科技有限公司 Package Mechanical Data-SOT-363-6L Symbol Dim in mm min. typ. max. A 0.9 1 1.1 A1 0 0.05 0.1 A2 0.9 0.95 1 b 0.15 0.25 0.35 c 0.1 0.12 0.15 D 1.8 2 2.2 E 2.15 2.25 2.35 E1 1.15 1.25 1.35 e 0.650TYP e1 1.2 1.3 1.4 L 0.25 0.3 0.4 L1 0.525REF θ 0° 4° 8°

20V N+P-Channel Enhancement Mode MOSFET AP3439DW REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

20V N+P-Channel Enhancement Mode MOSFET AP3439DW REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2022/9/21 Initial release