AP3401MI-L APME | Alldatasheet
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-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司
Description
TheAP3401MI-LusesadvancedTrench technology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas2.5V.This deviceissuitableforuseasaBatteryprotection orinotherSwitchingapplication. GeneralFeatures VDS =-30V ID =-4.2A RDS(ON) <55mΩ@VGS=10V(Type：45mΩ) RDS(ON) <68mΩ@VGS=4.5V(Type：53mΩ) Application Batteryprotection Loadswitch Uninterruptiblepowersupply PackageMarkingandOrderingInformation ProductID Pack Marking Qty(PCS) AP3401MI-L SOT23-3L 3401M-LAP 3000 AbsoluteMaximum Ratings (TC=25℃unlessotherwise noted) Symbol Parameter Max. Units VDSS Drain-SourceVoltage -30 V VGSS Gate-SourceVoltage ±12 V ID@TC=25℃ ContinuousDrainCurrent,VGS @-10V1 -4.2 A ID@TC=100℃ ContinuousDrainCurrent,VGS @-10V1 -2.7 A IDM PulsedDrainCurrentnote1 -16.8 A PD PowerDissipation TA=25℃ 1.5 W RθJA ThermalResistanceJunction-Ambient1 125 ℃/W RθJC ThermalResistanceJunction-Case1 124 ℃/W TJ,TSTG OperatingandStorageTemperatureRange -55to+150 ℃
-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司 ElectricalCharacteristics(TJ=25 ℃,unlessotherwisenoted) Symbol Parameter TestCondition Min Typ Max. Units V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V,ID=-250μA -30 - - V IDSS ZeroGateVoltageDrainCurrent VDS=-30V,VGS=0V, - - -1 μA IGSS GatetoBodyLeakageCurrent VDS=0V,VGS=±12V - - ±100 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=-250μA -0.5 -0.9 -1.5 V RDS(on) StaticDrain-Sourceon-Resistancenote2 VGS=-10V,ID=-4A - 45 55 mΩVGS=-4.5V,ID=-3A - 53 68 VGS=-2.5V,ID=-1A - 72 96 V Ciss InputCapacitance VDS=-15V,VGS=0V, f=1.0MHz - 500 - pF Coss OutputCapacitance - 80 - pF Crss ReverseTransferCapacitance - 2 - pF Qg TotalGateCharge VDS=-15V,ID=-4.2A, VGS=-10V - 8.5 - nC Qgs Gate-SourceCharge - 1.8 - nC Qgd Gate-Drain(“Miller”)Charge - 2.7 - nC td(on) Turn-onDelayTime VDD=-15V,ID=-1A, VGS=-10V, RGEN=2.5Ω - 7 - ns tr Turn-onRiseTime - 3 - ns td(off) Turn-offDelayTime - 20 - ns tf Turn-offFallTime - 12 - ns IS MaximumContinuousDraintoSourceDiodeForward Current - - -4.2 A ISM MaximumPulsedDraintoSourceDiodeForwardCurrent - - -16.8 A VSD DraintoSourceDiodeForwardVoltage VGS=0V,IS=-4.2A - -0.8 -1.2 V Note: 1、Thedatatestedbysurfacemountedona1inch2FR-4boardwith2OZcopper. 2、Thedatatestedbypulsed,pulsewidth≦ 300us,dutycycle≦ 2% 3、Thepowerdissipationislimitedby150℃ junctiontemperature 4、ThedataistheoreticallythesameasIDandIDM,inrealapplications,shouldbelimitedbytotalpowerdissipation.
-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司 TypicalCharacteristics Figure1:OutputCharacteristics Figure2:TypicalTransferCharacteristics Figure3:On-resistancevs.DrainCurrent Figure4:BodyDiodeCharacteristics Figure5:GateChargeCharacteristics Figure6:CapacitanceCharacteristics
-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司 Figure7:NormalizedBreakdownVoltagevs. Figure8:NormalizedonResistancevs. JunctionTemperature JunctionTemperature Figure9:MaximumSafeOperatingArea Figure10:MaximumContinuousDrainCurrent vs.AmbientTemperature Figure.11:MaximumEffectiveTransientThermal Impedance,Junction-to-Ambient
-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E1 1.500 1.700 0.059 0.067 E 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8°
-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司
-30V P-Channel Enhancement Mode MOSFET AP3401MI-LRVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2022/8/31 Initial release