AP3205P

AP3205P APME | Alldatasheet

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Technical content

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 1 1

Description

The AP3205P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS =55V,ID=110A RDS(ON) <8.0mΩ@ VGS=10V Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3205P TO-220-3L AP3205P XXX YYYY 1000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 55 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TC = 25℃ 110 A TC = 100℃ 80 A IDM Pulsed Drain Current note1 390 A PD Power Dissipation TC = 25℃ 200 W RθJC Thermal Resistance, Junction to Case 0.75 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 2 2 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 55 - - V IDSS Zero Gate Voltage Drain Current VDS =55V, VGS = 0V, TJ= 25℃ - - 1.0 μA VDS =44V, TC = 125℃ - - 10 IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ± 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 2.0 - 4.0 V RDS(on) Static Drain-Source on-Resistance note2 VGS =10V, ID =30A - 7.2 8.0 mΩ gFS Forward Transconductance VDS =20V, ID =30A 45 - - S Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 3291 - pF Coss Output Capacitance - 671.5 - pF Crss Reverse Transfer Capacitance - 112.1 - pF Qg Total Gate Charge VDD =44V, ID =30A, VGS = 10V - 112 - nC Qgs Gate-Source Charge - 23.2 - nC Qgd Gate-Drain(“Miller”) Charge - 34.9 - nC td(on) Turn-on Delay Time V DD=28V, ID=30V, RG=5Ω, VGS =10V, - 19.5 - ns tr Turn-on Rise Time - 50.7 - ns td(off) Turn-off Delay Time - 55 - ns tf Turn-off Fall Time - 24.6 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - 110 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 390 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=30A - - 1.3 V trr Reverse Recovery Time VGS =0V, IF=30A, di/dt=100A/μs - 62.3 - ns Qrr Reverse Recovery Charge - 137 - nC Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 3 3 Electrical Characteristics Diagrams Figure 5 Maximum Effective Thermal Impendance , Junction to Case

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 4 4 Figure 9 Typical Drain to Source ON Resistance Figure 10 Ty pical Drian to Source on Resistance vs Drain Current vs Junction Temperature

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 5 5 Test Circuit and Waveform

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 6 6

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 7 7

55V N-Channel Enhancement Mode MOSFET AP3205P Rve1.0 臺灣永源微電子科技有限公司 8 8 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.