AP3000A-00 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 300 V CJ VR = 50 V f = 1.0 MHz VR = 40 V 0.2 pF RS IF = 50 mA f = 100 MHz 0.6 Ohms TL IF =10 mA IR = 6.0 mA 1000 nS Trr IF =20 mA IR = 100 mA 100 nS SILICON PIN DIODE CHIP AP3000A-00 DESCRIPTION: The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of Control Applications Such as RF Switching,Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. MAXIMUM RATINGS IF 100 mA VR 300 V PDISS 250 mW @ TA = 25 O C θθθθJC 20 O C/W PACKAGE STYLE 01