AP2R803GH-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=30V,ID=80A,RDS(ON)<2.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current,Package Limited-TC=25℃ 80 A Continuous Drain Current,Package Limited-TC=100℃ 73 Continuous Drain Current,Silicon- TC=25℃ 163 IDM Pulsed Drain Current(Note2) 240 EAS Avalanche Energy, Single Pulse (Note 3) 160 mJ IAR Avalanche Current, Repetitive (Note 2) 20 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ TLEAD Lead Temperature (Soldering, 10 sec) 260 ℃ D G S All d ata sheet.com
www.doingter.cn — 2 — Thermal Characteristics： Symbol Parameter Max Units RthJC Thermal Resistance,Junction to Case 1.85 ℃/W Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(TH) Gate Threshold Voltage VDS=VGS,ID=0.25mA 1.2 1.7 2.1 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 2.2 2.5 mΩ VGS=4.5V,ID=20A 3.1 3.5 mΩ Dynamic Characteristics Ciss Input Capacitance --- 2.5 --- nF Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz --- 580 --- pF Crss Reverse Transfer Capacitance --- 114 --- pF Switching Characteristics td(on) Turn-On Delay Time VDD=15V , VGS=10V RG=1.6Ω，ID=20A --- 11 --- ns tr Rise Time --- 8 --- ns td(off) Turn-Off Delay Time --- 46 --- ns tf Fall Time --- 8 --- ns All d ata sheet.com
www.doingter.cn — 3 — Qg Gate Charge Total --- 38.6 --- nC Qgs Gate-Source Charge VGS=0 to10V, VDD=15V, --- 5.3 --- nC Qgd Gate-Drain Charge ID=20A --- 5 --- nC Vplateau Gate Plateau Voltage --- 2.8 --- V Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage VGS=0V,ISD=20A --- 0.79 1.1 V trr Reverse Recovery Time VR=15V,IF=20A dIF/dt=100A/us --- 25 --- ns qrr Reverse Recovery Charge --- 50 --- nC Notes: 1. Absolutemaximumratingsarethosevaluesbeyondwhichthedevicecouldbepermanentlydamaged. Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied. 2. RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature 3.IAS =20.0A,V DD =15V,R G =25Ω,StartingT J =25°C Typical Characteristics： (TC=25℃ unless otherwise noted) Ptot=f(Tc) Z(thJC)=f(t p);parameter:D= t p/T Figure1:PowerDissipation Figure2:Max.TransientThermalImpedance All d ata sheet.com
www.doingter.cn — 4 — ID =f(TC); VGS≥10V ID =f(VDS);Tj=25ºC;parameter:V GS Figure3:DrainCurrent Figure4:Typ.OutputCharacteristics RDS(ON) =f(ID);Tj=25ºC;parameter: VGS ID =f(VGS);|VDS|>2|ID|RDS(on)max;parameter:T j Figure5:Typ.Drain-SourceOn-StateResistance Figure6:Typ.TransferCharacteristics All d ata sheet.com
www.doingter.cn — 5 — gfs=f(ID);Tj=25℃ RDS(ON)=f(Tj);ID=20A;VGS=10V Figure7:Typ.Forward Transconductance Figure8:Typ.Drain-SourceOn-StateResistance VGS(th)=f(Tj);VGS=VDS; IDS=250μA VGS=f(Qgate ),ID=20Apulsed Figure9 :Typ.GateThresholdVoltage Figure10:Typ.GateCharge All d ata sheet.com
www.doingter.cn — 6 — VBR(DSS)=f(Tj); ID=1mA IF=f(VSD);parameter:T j Figure11:Drain-SourceBreakdownVoltage Figure12: ForwardCharacteristicsofReverseDiode EAS=f(Tj); ID=20.0A;VDD=15V C=f)VDS;VGS=0; f=1MHz Figure13:AvalancheEnergy Figure14:Typ.Capacitances All d ata sheet.com
www.doingter.cn — 7 — ID=f(VDS);TC=25ºC;VGS>7V;parameter:t p Figure15:SafeOperatingArea 0086-0755-8278-9056 All d ata sheet.com