AP2N65DY APME | Alldatasheet
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650V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司
Description
The AP2N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS =650V,ID =2A RDS(ON) <4.8Ω@ VGS=10V Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2N65D AP2N65D XXX YYYY 2500 AP2N65Y AP2N65Y XXX YYYY 4000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS 650 V Continuous Drain Current ID 2 A Pulsed Drain Current IDM 6 A Gate-Source Voltage VGSS ±30 V Single Pulse Avalanche Energy EAS 57 mJ Avalanche Current IAR 2.4 A Repetitive Avalanche Energy EAR 6.4 mJ Power Dissipation (TC = 25ºC) PD 25 W Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance, Junction-to-Case RthJC 5 ºC/W Thermal Resistance, Junction-to-Ambient RthJA 60 AP2N65D/Y Rve1.0 TO-252-3L TO-251-3L
650V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 1.0A -- 4 4.8 Ω Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1.0MHz -- 310 -- pF Output Capacitance Coss -- 39 -- Reverse Transfer Capacitance Crss -- 6 -- Total Gate Charge Qg VDD = 520V, ID = 2.0A, VGS = 10V -- 8.0 -- nC Gate-Source Charge Qgs -- 1.2 -- Gate-Drain Charge Qgd -- 5 -- Turn-on Delay Time td(on) VDD = 300V, ID = 2.0A, RG = 25 Ω -- 7.8 -- ns Turn-on Rise Time tr -- 33 -- Turn-off Delay Time td(off) -- 23 -- Turn-off Fall Time tf -- 59 -- Continuous Body Diode Current IS TC = 25 ºC -- -- 2 A Pulsed Diode Forward Current ISM -- -- 8 Body Diode Voltage VSD TJ = 25ºC, ISD = 2.0A, VGS = 0V -- -- 1.4 V Reverse Recovery Time trr VGS = 0V,IS = 2.0A, diF/dt =100A /μs -- 80 -- ns Reverse Recovery Charge Qrr -- 1.8 -- μC Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% AP2N65D/Y Rve1.0
Figure 1. Output Characteristics (TJ = 25ºC) Figure 2. Body Diode Forward Voltage
650V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform AP2N65D/Y Rve1.0
650V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Package Mechanical Data Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D TO-252 Reel Spectification-TO-252 W E F T A A A A B B B B Dimensions Millimeters InchesRef. W E F T 15.90 1.65 7.40 1.40 16.10 1.85 7.60 1.60 0.626 0.065 0.291 0.055 0.634 0.073 0.299 0.063 1.40 1.60 7.90 10.45 10.60 0.411 0.417 0.24 0.27 0.009 0.011 0.055 0.063 3.90 4.10 6.90 0.271 10P0 0.154 0.161 8.10 0.311 0.319 1.90 2.10 0.075 0.083 0.10 0.004 40.00 1.575 2.78 0.109 Φ329 Φ13 16.00 1.75 7.50 1.50 1.50 4.00 8.00 2.00 10.50 0.630 0.069 0.295 0.059 0.059 0.157 0.315 0.079 0.413 6.85 7.00 2.68 2.88 0.270 0.276 0.105 0.113 39.80 40.20 1.567 1.583 OUTLINE REEL (PCS) PER CARTON (PCS) TAPE & REEL TAPING 2,500 25,000 13inch AP2N65D/Y Rve1.0
650V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Package Mechanical Data E H G B D A C Dimensions Millimeters InchesRef. A B C D E G H 2.10 2.50 0.083 0.098 0.66 0.86 0.026 0.034 5.15 5.48 0.203 0.216 0.44 0.58 0.017 0.023 5.90 6.30 0.232 0.248 6.40 6.80 0.252 0.268 10.60 11.80 0.417 0.465 2.30 0.76 5.33 0.51 6.10
5.30 REF
6.60
4.83 REF
11.20 0.091 0.030 0.210 0.020 0.240
0.209 REF
0.260
0.190 REF
0.441 TO-251S Package Information-TO-251S OUTLINE TUBE (PCS) INNER BOX (PCS) PER CARTON (PCS) TUBE 80 4,000 32,000 AP2N65D/Y Rve1.0
650V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applicatio ns. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an indep endent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconducto r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designi ng equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the ev ent that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the e xport license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume pro duction. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information de scribed or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. AP2N65D/Y Rve1.0