AP2N20MI APME | Alldatasheet
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200V N-Channel Enhancement Mode MOSFET AP2N20MI RVE 3.5 永源微电 子科技有限公司 Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2N20MI MB3-2A 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 2 A IDM Drain Current-Pulsed (Note 1) 10 A PD Maximum Power Dissipation 3 W TJ,TSTG Operating Junction and Storage Temperature Range -55 To 150 ℃ RθJA Thermal Resistance,Junction-to-Ambient (Note 2) 41.7 ℃/W
Description
The AP2N20MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system General Features VDS =200V,ID =2A RDS(ON) <1800mΩ@ VGS=10V Application LED dimming Emergency lam SOT23-3L p
200V N-Channel Enhancement Mode MOSFET 永源微电AP2N20MI RVE 3.5 子科技有限公司 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 200 - - V IDSS Zero Gate Voltage Drain Current VDS=200V,VGS=0V - - 1 μA IGSS Gate-Body Leakage Current VGS=± 20V,VDS=0V - - ± 100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 - 3.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=2A - 1400 1800 mΩ gFS Forward Transconductance VDS=15V,ID=2A - 8 - S Clss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz - 580 - PF Coss Output Capacitance - 90 - PF Crss Reverse Transfer Capacitance - 3 - PF td(on) Turn-on Delay Time VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω - 10 - nS tr Turn-on Rise Time - 12 - nS td(off) Turn-Off Delay Time - 15 - nS tf Turn-Off Fall Time - 15 - nS Qg Total Gate Charge VDS=100V,ID=2A, VGS=10V - 12 nC Qgs Gate-Source Charge - 2.5 - nC Qgd Gate-Drain Charge - 3.8 - nC VSD Diode Forward Voltage (Note 3) VGS=0V,IS=2A - - 1.2 V IS Diode Forward Current (Note 2) - - 2 A Notes: 1、Repetitive Rating: Pulse width limited by maximum junction temperature. 2、Surface Mounted on FR4 Board, t ≤ 10 sec. 3、Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4、Guaranteed by design, not subject to production
200V N-Channel Enhancement Mode MOSFET 永源微电AP2N20MI RVE 3.5 子科技有限公司
200V N-Channel Enhancement Mode MOSFET 永源微电AP2N20MI RVE 3.5 子科技有限公司 the APM Microelectronics product that you Intend to use. Specification" for product/technology improvement,etc. When designing equipment, refer to the "Delivery to scribed or contained herein are subject to change without notice due8, Any and all information de property rights or other rights of third parties. intellectual reliable, but no guarantees are made or implied regarding its use or any infringements of and duction. APM Microelectronics believes information herein is accurateguaranteed for volume pro not 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is Semiconductor CO., LTD. otherwise, without the prior written permission of APM Microelectronics retrieval system, or orage ormechanical, including photocopying and recording, or any information st 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or accordance with the above law. authorities concerned in xport license from theproducts must not be exported without obtaining the e regulations, such or contained herein are controlled under any of applicable local export control laws and described ent that any or all APM Microelectronics products(including technical data, services)5,In the ev design,and structural design. for safe design, redundant but are not limited to protective circuits and error prevention circuits occur. Such measures include adopt safety measures so that these kinds of accidents or events cannot ng equipment, designi give rise to smoke or fire, or that could cause damage to other property. When that could probabilistic failures could give rise to accidents or events that could endanger human lives these r products fail with some probability. It is possible thatHowever, any and all semiconducto products. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products or equipment. s ’and test devices mounted in the customer endent device, the customer should always evaluateindep states that cannot be evaluated in an s products or equipment. To verify symptoms and’in the customer described products as mounted not guarantees of the performance, characteristics, and functions of the ed products in the independent state, and are performance, characteristics, and functions of the describ instipulate the 3, Specifications of any and all APM Microelectronics products described or contained here products described or contained herein. Microelectronics specifications of any and all APMranges, or other parameters) listed in products condition at values that exceed, even momentarily, rated values (such as maximum ratings, operating products 2,APM Microelectronics assumes no responsibility for equipment failures that result from using ns.described or contained herein in such applicatio you before using any APM Microelectronics products Microelectronics representative nearest serious physical and/or material damage. Consult with your APM reasonably expected to result in whose failure can beaircraft's control systems, or other applications life support systems, that can handle applications that require extremely high levels of reliability, such as specifications and all APM Microelectronics products described or contained herein do not have 1,Any Attention
200V N-Channel Enhancement Mode MOSFET 永源微电AP2N20MI RVE 3.5 子科技有限公司 Copyright Attribution“APM-Microelectronics” Edition Date Change Rve3.2 2018/1/31 Initial release Rve3.3 2019/12/01 Reduce RDS Rve3.4 2020/4/01 Reduce VTH Rve3.5 2025/6/04 Update LOGO And Corrected Manual POD