AP2765I-A-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=650V,ID=10 A,RDS(ON)<0.78Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 10 AContinuous Drain Current-TC=100℃ 6.3 Pulsed Drain Current1 40 EAS Single Pulse Avalanche Energy2 560 mJ PD Power Dissipation 27 W IAR AvalancheCurrent 1 10 A EAR RepetitiveAvalancheEnergy 45 MJ Dv/dt PeakDiodeRecoverydv/ 5 TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： GDS All d ata sheet.com
www.doingter.cn — 2 — AP2765I-A-HF Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 4.63 ℃/W RƟJA Thermal Resistance,Junction to Ambient 45.5 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 650 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=650V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5A --- 0.63 0.78 Ω GFS Forward Transconductance VDS=40V, ID=4A --- 11 --- S Dynamic Characteristics Ciss Input Capacitance --- 1189 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 161 --- pF Crss Reverse Transfer Capacitance --- 3.6 --- Switching Characteristics td(on) Turn-On Delay Time VDD=325V, ID=10A, RGEN=25 --- 14 --- ns tr Rise Time --- 29 --- ns td(off) Turn-Off Delay Time --- 61 --- ns tf Fall Time --- 36 --- ns Qg Total Gate Charge VGS=10V, VDS=520V, ID=10A --- 24 --- nC Qgs Gate-Source Charge --- 6.2 --- nC All d ata sheet.com
Figure 11. Transient Thermal Response Curve