AP260N12MP APME | Alldatasheet

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120V N-Channel Enhancement Mode MOSFET AP260N12MP REV1.0 永源微電子科技有限公司

Description

The AP260N12MP uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V （Type：135V） ID =260A RDS(ON) < 4.2mΩ @ VGS=10V (Type：3.7mΩ) Application BMS UPS Power Management Switches Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP240N12MP TO-247-3L AP240N12MP XXX YYYY 330 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 260 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 180 A IDM Pulsed Drain Current 360 A EAS Single Pulse Avalanche Energy 530 mJ IAS Avalanche Current 45 A PD@TC=25℃ Total Power Dissipation4 240 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 0.75 ℃/W RθJC Thermal Resistance Junction-Case 62 ℃/W

AP260N12MP REV1.0 永源微電子科技有限公司 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test Conditions Min. Type Max. Unit VDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 120 135 - V lGSS Gate-body Leakage current VDS = 0V, VGS = ±20V - - ±100 nA IDSS Zero Gate Voltage Drain Current TJ=25°C VDS =120V, VGS = 0V - - 1 μA IDSS Zero Gate Voltage Drain Current TJ=100°C - - 100 VGS(th) Gate-Threshold Voltage VDS = VGS, ID = 250µA 2.0 2.9 4.0 V RDS(on) Drain-Source on-Resistance2 VGS = 10V, ID = 20A - 3.7 4.2 mΩ RDS(on) Drain-Source on-Resistance2 VGS = 6V, ID = 20A 4.3 5.8 mΩ Ciss Input Capacitance VGS =0V, VDS =60V, f=250kHz - 5240 - pF Coss Output Capacitance - 739 - Crss Reverse Transfer Capacitance - 12 - Rg Gate Resistance VGS = 0V, VDS = 0V, f =1MHz - 1.7 - Ω Qg Total Gate Charge VDD=60V, ID =45A, VGS=0 to 10V - 19 - nC Qgs Gate-Source Charge - 11 - Qgd Gate-Drain Charge - 75 - td(on) Turn-on Delay Time VDD =60V, VGS =10V, ID=45A, RG=10Ω - 59 - ns tr Rise Time - 41 - td(off) Turn-off Delay Time - 96 - tf Fall Time - 33 - VSD Diode Forward Voltage2 IF = 20A, VGS = 0V - 0.8 1.2 V IS Continuous Source Current1,5 VG=VD=0V , Force Current - - 200 A trr Body Diode Reverse Recovery Time VR=60V IF=35A, dI/dt=100A/µs - 70 - ns Qrr Body Diode Reverse Recovery Charge - 200 - nC Notes: 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2% 3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=45A 4、The power dissipation is limited by 150°C junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. AP2 0N12MP 120V N-Channel Enhancement Mode MOSFET

AP260N12MP REV1.0 永源微電子科技有限公司 Figure 13: Typ. gate charge AP2 0N12MP 120V N-Channel Enhancement Mode MOSFET

AP260N12MP REV1.0 永源微電子科技有限公司 Package Mechanical Data-TO-247-3L Dim. Min. Max. A 15.0 16. 0 B 20.0 21.0 C 41.0 42.0 D 5.0 6.0 E 4.0 5.0 F 2.5 3.5 G 1.75 2.5 H 3.0 3.5 I 8.0 10.0 J 4.9 5.1 K 1.9 2.1 L 3.5 4.0 M 4.75 5.25 N 2.0 3.0 O 0.55 0.75 P 5.44（BSC） Q 1.2 1.3 AP2 0N12MP 120V N-Channel Enhancement Mode MOSFET

AP260N12MP REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applicatio ns. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an indep endent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconducto r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designi ng equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the ev ent that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the e xport license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume pro duction. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information de scribed or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. AP2 0N12MP 120V N-Channel Enhancement Mode MOSFET

120V N Channel Enhancement Mode MOSFET AP260N12MP REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2022/3/18 Initial release AP2 0N12MP 120V N-Channel Enhancement Mode MOSFET