AP25N10GP-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=100V,ID=30A,RDS(ON)≤70mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 30 AContinuous Drain Current-TC=100℃ 12 IDM Pulsed Drain Current 60 EAS Single Pulse Avalanche Energy5 250 mJ PD Power Dissipation 55 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.27 ℃/W RƟJA Thermal Resistance,Junction to Ambient --- All d ata sheet.com
www.doingter.cn Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics(Note 3) VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.8 2.8 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5 A --- 56 70 mΩ GFS Forward Transconductance VDS=50V,ID=9A 12 --- --- S Dynamic Characteristics(Note 4) Ciss Input Capacitance --- 1350 Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 240 pF Crss Reverse Transfer Capacitance --- 180 Switching Characteristics(Note4) td(on) Turn-On Delay Time VDD=30V, ID=2A, RGEN=15 Ω VGS=10V,RG=2.5Ω --- 13.8 --- ns tr Rise Time --- 9.3 --- ns td(off) Turn-Off Delay Time --- 43.8 --- ns tf Fall Time --- 11.4 --- ns Qg Total Gate Charge --- 31 nC Qgs Gate-Source Charge VGS=10V, VDS=30V, --- 6.4 --- nC Qgd Gate-Drain “Miller” Charge ID=3A --- 9.4 --- nC Drain-Source Diode Characteristics VSD (Note3) Source-Drain Diode Forward Voltage VGS=0V,Id=9 A --- --- 1.2 V IS DiodeForward Current(Note 2) --- --- 30 A — 2 — All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating: Pulse width limited by maximum junctiontemperature. 2. Surface Mounted onFR4 Board, t ≤ 10sec. 3. Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%. 4. Guaranteed by design, not subject toproduction 5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω Typical Characteristics： (TC=25℃ unless otherwise noted) Vds Drain-Source Voltage (V) Figure1Output Characteristics Vgs Gate-Source Voltage (V) Figure2TransferCharacteristics ID-Drain Current (A) Figure3Rdson- Drain Current TJ-Junction Temperature(℃) Figure4 Rdson-JunctionTemperature Rdson On-Resistance(mΩ) ID-Drain Current (A) ID-Drain Current (A) Normalized On-Resistance All d ata sheet.com
www.doingter.cn — 4 — QgGate Charge (nC) Figure5GateCharge Vds Drain-Source Voltage (V) Figure7Capacitancevs Vds TJ-Junction Temperature(℃) Figure9 BV DSS vs JunctionTemperature Vsd Source-Drain Voltage (V) Figure6Source-Drain DiodeForward Vds Drain-Source Voltage (V) Figure8SafeOperationArea TJ-Junction Temperature(℃) Figure10V GS(th) vs Junction Temperature C Capacitance (pF) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Is-Reverse Drain Current(A) All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure11NormalizedMaximum Transient ThermalImpedance 0086-0755-8278-9056 r(t),Normalized Effective Transient Thermal Impedance All d ata sheet.com