AP25N10GH-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=100 V,ID=15A,RDS(ON)<75 mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 15 APulsed Drain Current 45 IS C ontinuous diode current1 15 ISP Pulsed Drain Current 45 A EAS Single Pulse Avalanche Energy 5.5 mJ PD Power Dissipation 36 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.5 ℃/W D G S All d ata sheet.com
www.doingter.cn — 2 — RƟJA Thermal Resistance Junction to mbient 62 ℃/W Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100 V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=5 A --- 50 75 mΩ VGS=4.5V,ID=3A --- 60 90 Dynamic Characteristics Ciss Input Capacitance --- 310 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 171 --- pF Crss Reverse Transfer Capacitance --- 16.7 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=2 Ω，ID=5A --- 14 --- ns tr Rise Time --- 3.2 --- ns td(off) Turn-Off Delay Time --- 36 --- ns tf Fall Time --- 14 --- ns Qg Total Gate Charge --- 6.5 --- nC Qgs Gate-Source Charge VGS=10 V, VDS=50V, --- 1.4 --- nC Qgd Gate-Drain “Miller” Charge ID=5 A --- 1.4 --- nC Drain-Source Diode Characteristics All d ata sheet.com