AP250N03NF APME | Alldatasheet

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30V N-Channel Enhancement Mode MOSFET AP250N03NF REV1.0 永源微電子科技有限公司

Description

The AP250N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =250A RDS(ON) < 0.7mΩ @ VGS=10V （Type：0.55mΩ） Application Boost driver Brushless motor BLDC Clip packaging process Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP250N03NF PDFN5*6-8L AP250N03NF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 250 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 220 A IDM Pulsed Drain Current2 1500 A EAS Single Pulse Avalanche Energy3 1332 mJ IAS Avalanche Current 73 A PD@TC=25℃ Total Power Dissipation4 165 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 25 ℃/W RθJC Thermal Resistance Junction-Case1 0.75 ℃/W

30V N-Channel Enhancement Mode MOSFET AP250N03NF REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 36 --- V VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 0.55 0.7 mΩ VGS=4.5V , ID=10A --- 0.7 1.0 mΩ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=20A --- 130 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 --- Ω Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 9130 --- pF Coss Output Capacitance --- 3360 --- Crss Reverse Transfer Capacitance --- 300 --- Qg Total Gate Charge (4.5V) VDS=15V , VGS=10V , ID=20A --- 147.4 --- nC Qgs Gate-Source Charge --- 25.2 --- Qgd Gate-Drain Charge --- 18 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3Ω，ID=20A --- 14.8 --- ns Tr Rise Time --- 15.6 --- Td(off) Turn-Off Delay Time --- 106 --- Tf Fall Time --- 49 --- IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 250 A VSD Diode Forward Voltage2 VGS=0V , IS=20A , TJ=25℃ --- --- 1.2 V Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=40V,VGS =10V,L=0.5mH,IAS =73A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

30V N-Channel Enhancement Mode MOSFET AP250N03NF REV1.0 永源微電子科技有限公司 Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070

30V N-Channel Enhancement Mode MOSFET AP250N03NF REV1.0 永源微電子科技有限公司 the APM Microelectronics product that you Intend to use. Specification" for product/technology improvement,etc. When designing equipment, refer to the "Delivery to scribed or contained herein are subject to change without notice due8, Any and all information de property rights or other rights of third parties. intellectual reliable, but no guarantees are made or implied regarding its use or any infringements of and duction. APM Microelectronics believes information herein is accurateguaranteed for volume pro not 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is Semiconductor CO., LTD. otherwise, without the prior written permission of APM Microelectronics retrieval system, or orage ormechanical, including photocopying and recording, or any information st 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or accordance with the above law. authorities concerned in xport license from theproducts must not be exported without obtaining the e regulations, such or contained herein are controlled under any of applicable local export control laws and described ent that any or all APM Microelectronics products(including technical data, services)5,In the ev design,and structural design. for safe design, redundant but are not limited to protective circuits and error prevention circuits occur. Such measures include adopt safety measures so that these kinds of accidents or events cannot ng equipment, designi give rise to smoke or fire, or that could cause damage to other property. When that could probabilistic failures could give rise to accidents or events that could endanger human lives these r products fail with some probability. It is possible thatHowever, any and all semiconducto products. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products or equipment. s ’and test devices mounted in the customer endent device, the customer should always evaluateindep states that cannot be evaluated in an s products or equipment. To verify symptoms and’in the customer described products as mounted not guarantees of the performance, characteristics, and functions of the ed products in the independent state, and are performance, characteristics, and functions of the describ instipulate the 3, Specifications of any and all APM Microelectronics products described or contained here products described or contained herein. Microelectronics specifications of any and all APMranges, or other parameters) listed in products condition at values that exceed, even momentarily, rated values (such as maximum ratings, operating products 2,APM Microelectronics assumes no responsibility for equipment failures that result from using ns.described or contained herein in such applicatio you before using any APM Microelectronics products Microelectronics representative nearest serious physical and/or material damage. Consult with your APM reasonably expected to result in whose failure can beaircraft's control systems, or other applications life support systems, that can handle applications that require extremely high levels of reliability, such as specifications and all APM Microelectronics products described or contained herein do not have 1,Any Attention

30V N-Channel Enhancement Mode MOSFET AP250N03NF REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change RVE1.0 2023/9/23 Initial release