AP2307AI

AP2307AI APME | Alldatasheet

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-20V P-Channel Enhancement Mode MOSFET AP2307AI RVE1.0 永源微電子科技有限公司

Description

The AP2307AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-7A RDS(ON) < 25mΩ @ VGS=-4.5V (Type:20mΩ) Application Quick charge electronic cigarette Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2307AI SOT23L 2307A 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -7 A ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 -4.8 A IDM Pulsed Drain Current2 -23.8 A PD@TA=25℃ Total Power Dissipation3 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 62.5 ℃/W RθJC Thermal Resistance Junction-Case1 80 ℃/W

-20V P-Channel Enhancement Mode MOSFET AP2307AI RVE1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -20 -22 - V IDSS Zero Gate Voltage Drain Current VDS= -20V, VGS=0V, - - -1 μA IGSS Gate to Body Leakage Current VDS=0V, VGS= ±12V - - ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID= -250μA -0.5 -0.7 -1.2 V RDS(on) Static Drain-Source on-Resistance note2 VGS= -4.5V, ID= -6A - 20 25 mΩ VGS= -2.5V, ID= -5A - 28 35 Ciss Input Capacitance VDS= -10V, VGS=0V, f=1.0MHz - 2000 - pF Coss Output Capacitance - 242 - pF Crss Reverse Transfer Capacitance - 231 - pF Qg Total Gate Charge VDS= -10V, ID= -3A, VGS= -4.5V - 15.3 - nC Qgs Gate-Source Charge - 2.2 - nC Qgd Gate-Drain(“Miller”) Charge - 4.4 - nC td(on) Turn-on Delay Time VDD = -10V, ID= -7A, VGS= -4.5V, RGEN=2.5Ω - 10 - ns tr Turn-on Rise Time - 31 - ns td(off) Turn-off Delay Time - 28 - ns tf Turn-off Fall Time - 8 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - -7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -28 A VSD Drain to Source Diode Forward Voltage VGS=0V, IS= -7A - -0.8 -1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

-20V P-Channel Enhancement Mode MOSFET AP2307AI RVE1.0 永源微電子科技有限公司 Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°

-20V P-Channel Enhancement Mode MOSFET AP2307AI RVE1.0 永源微電子科技有限公司 the APM Microelectronics product that you Intend to use. Specification" for product/technology improvement,etc. When designing equipment, refer to the "Delivery to scribed or contained herein are subject to change without notice due8, Any and all information de property rights or other rights of third parties. intellectual reliable, but no guarantees are made or implied regarding its use or any infringements of and duction. APM Microelectronics believes information herein is accurateguaranteed for volume pro not 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is Semiconductor CO., LTD. otherwise, without the prior written permission of APM Microelectronics retrieval system, or orage ormechanical, including photocopying and recording, or any information st 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or accordance with the above law. authorities concerned in xport license from theproducts must not be exported without obtaining the e regulations, such or contained herein are controlled under any of applicable local export control laws and described ent that any or all APM Microelectronics products(including technical data, services)5,In the ev design,and structural design. for safe design, redundant but are not limited to protective circuits and error prevention circuits occur. Such measures include adopt safety measures so that these kinds of accidents or events cannot ng equipment, designi give rise to smoke or fire, or that could cause damage to other property. When that could probabilistic failures could give rise to accidents or events that could endanger human lives these r products fail with some probability. It is possible thatHowever, any and all semiconducto products. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products or equipment. s ’and test devices mounted in the customer endent device, the customer should always evaluateindep states that cannot be evaluated in an s products or equipment. To verify symptoms and’in the customer described products as mounted not guarantees of the performance, characteristics, and functions of the ed products in the independent state, and are performance, characteristics, and functions of the describ instipulate the 3, Specifications of any and all APM Microelectronics products described or contained here products described or contained herein. Microelectronics specifications of any and all APMranges, or other parameters) listed in products condition at values that exceed, even momentarily, rated values (such as maximum ratings, operating products 2,APM Microelectronics assumes no responsibility for equipment failures that result from using ns.described or contained herein in such applicatio you before using any APM Microelectronics products Microelectronics representative nearest serious physical and/or material damage. Consult with your APM reasonably expected to result in whose failure can beaircraft's control systems, or other applications life support systems, that can handle applications that require extremely high levels of reliability, such as specifications and all APM Microelectronics products described or contained herein do not have 1,Any Attention

-20V P-Channel Enhancement Mode MOSFET AP2307AI RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2020/12/20 Initial release