AP220N12F APME | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

120V N-Channel Enhancement Mode MOSFET AP220N12P/T/F REV1.0 永源微电子科技有限公司

Description

The AP220N12P/T uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =220A RDS(ON) < 4.5mΩ @ VGS=10V (Type：3.5mΩ) Application BMS UPS Power Management Switches Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP220N12P TO220-3L AP220N12P XXX YYYY 1000 AP220N12T TO263-3L AP220N12T XXX YYYY 800 AP220N12F TO220F-3L AP220N12F XXX YYYY 1000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 120 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 240 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 103 A IDM Pulsed Drain Current 960 A EAS Single Pulse Avalanche Energy 1118 mJ IAS Avalanche Current 45 A PD@TC=25℃ Total Power Dissipation4 106 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 62 ℃/W RθJC Thermal Resistance Junction-Case 0.5 ℃/W

120V N-Channel Enhancement Mode MOSFET AP220N12P/T/F REV1.0 永源微电子科技有限公司 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA 120 145 - V lGSS Gate-body Leakage current VDS=0V, VGS = ±20V - - ±100 nA IDSS Zero Gate Voltage Drain Current TJ=25°C VDS=100V, VGS=0V - - 1 μA IDSS Zero Gate Voltage Drain Current TJ=100°C - - 100 VGS(th) Gate-Threshold Voltage VDS=VGS, ID=250µA 2.0 2.8 4.0 V RDS(on) Drain-Source on-Resistance4 VGS=10V, ID=20A - 3.5 4.6 mΩ Ciss Input Capacitance VDS=60V, VGS=0V, f=1MHz - 9600 - pF Coss Output Capacitance - 775 - Crss Reverse Transfer Capacitance - 26 - Rg Gate Resistance f =1MHz - 2.4 - Ω Qg Total Gate Charge VGS=10V, VDS=60V, ID=20A - 141 - nC Qgs Gate-Source Charge - 46 - Qgd Gate-Drain Charge - 30 - td(on) Turn-on Delay Time VGS=10V, VDD=60V, RG=6.2Ω, ID=20A - 39 - ns tr Rise Time - 59 - td(off) Turn-off Delay Time - 124 - tf Fall Time - 62 - trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs - 108 - ns Qrr Body Diode Reverse Recovery Charge - 252 - nC VSD Diode Forward Voltage4 ID = 20A, VGS=0V - - 1.2 V IS Continuous Source Current TC=25°C - - 220 A Notes: 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2% 3、The EAS data shows Max. rating . The test condition is V DD =50V, VGS =10V, L=0.5mH, IAS =51A 4、The power dissipation is limited by 150°C junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

120V N-Channel Enhancement Mode MOSFET AP220N12P/T/F REV1.0 永源微电子科技有限公司 Package Mechanical Data:

120V N-Channel Enhancement Mode MOSFET AP220N12P/T/F REV1.0 永源微电子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

120V N-Channel Enhancement Mode MOSFET AP220N12P/T/F REV1.0 永源微电子科技有限公司 Copyright Attribution“APM-Microelectronics” Edition Date Change REV1.0 2024/8/5 Initial release