AP2000A-00 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TA = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 120 V CJ VR = 10 V f = 1.0 MHz 0.10 pF RS IF = 10 mA f = 100 MHz 1.0 1.5 ΩΩΩΩ TL IF = 10 mA IR = 6.0 mA 150 nS trr IF = 20 mA VR = 10 V 15 nS SILICON PIN DIODE CHIP AP2000A-00 DESCRIPTION: The AP2000A-00 is a Planar Silicon PIN Diode Chip Designed for Medium Speed Switching Applications Up to 18 GHz. FEATURES INCLUDE:
- ••• Low Capacitance - 0.10 pF Typical
- ••• Fast Switching - 15 nS Typical
- ••• SiO2 Passivation MAXIMUM RATINGS IF 100 mA VR 120 V PDISS 0.5 W @ TA = 25 O C TJ -65 O C to +175 O C TSTG -65 O C to +200 O C θθθθJC 45 O C/W PACKAGE STYLE CHP152 0.015” ±0.002” SQ. Anode = Pad Cathode = Bottom Side 0.002” ±0.001”