AP18T10GM-HF

AP18T10GM-HF DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=100V,ID=3A,RDS(ON)<135mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current– Continuous (TC=25℃ ) 3 ADrain Current– Continuous (TC=100℃ ) 2.2 IDM Drain Current – Pulsed1 12 PD Power Dissipation (TC=25℃ ) 2.5 W Power Dissipation– Derate above 25℃ --- TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient 50 D D D S D S G All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V --- --- 25 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.7 3 V △VGS(th) VGS(th) Temperature Coefficient --- --- --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=3A --- 112 135 mΩ VGS=4.5V,ID=2A --- 120 145 GFS Forward Transconductance VDS=5V, ID=3A --- 11 --- S Dynamic Characteristics4 Ciss Input Capacitance --- 610 980 Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 40 --- pF Crss Reverse Transfer Capacitance --- 25 --- Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=50V, ID=1A, RGEN=3.3 Ω, VGS=10V --- 7 --- ns tr Rise Time2,3 --- 5 --- ns td(off) Turn-Off Delay Time2,3 --- 16 --- ns tf Fall Time2,3 --- 6 --- ns Qg Total Gate Charge2,3 --- 12 20 nC Qgs Gate-Source Charge2,3 VGS=10V, VDS=80V, --- 2.2 --- nC Qgd Gate-Drain “Miller” Charge2,3 ID=3A --- 2.5 --- nC Drain-Source Diode Characteristics All d ata sheet.com

www.doingter.cn — 3 — G=3.V 0V5. 0V1C25oTA= NormalizedR DS(ON) ID ,DrainCurrent (A) VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=2A,TJ=25℃ --- --- 1.2 V Trr Reverse Recovery TimeI S=3A, VGS=0V dI/dt=100A/µs --- 22 --- A Qrr Reverse Recovery Charge --- --- --- A Notes: 1.Pulsewidth limited by Max. junction temperature. 2.Pulsetest 3.Surfacemounted on 1in2 copper pad of FR4board, t <10sec ; 125℃/W when mounted on Min. copper pad. Typical Characteristics： (TC=25℃ unless otherwise noted) 10 10 8 8 6 6 4 4 2 2 0 1 2 3 4 5 0 2 4 6 8 VDS ,Drain-to-SourceVoltage(V) VDS ,Drain-to-SourceVoltage(V) Fig1.Typical Output Characteristics Fig2.TypicalOutput Characteristics 130 2.8 2.4 126 2.0 122 118 114 1.6 1.2 0.8 110 2 4 6 8 10 0.4 -100 -50 0 50 100 150 VGS ,Gate-to-SourceVoltage(V) Tj ,JunctionTemperature( o C) Fig3.On-Resistance v.s.Gate Voltage Fig4.Normalized On-Resistance v.s.JunctionTemperature .0V .0V VG =3 .0V5 .0V .0V 10V C150oTA= V10=VG A3=ID RDS(ON)(m Ω) ID ,DrainCurrent (A) ID =2A TA =25oC All d ata sheet.com

www.doingter.cn — 4 — Operation in this area limited by RDS(ON) 100us 1ms 10ms 100ms TA =25o C SinglePulse DC V ID =3A VDS =80 2.5 1.5 0.5 2.0 1.6 1.2 0.8 0.4 0.0 -100 -50 0 50 100 150 VSD ,Source-to-DrainVoltage(V) Tj ,JunctionTemperature( o C) Fig5.Forward Characteristic of Fig6.GateThresholdVoltage v.s. ReverseDiode JunctionTemperature 12 1000 f=1.0MHz 800 600 400 200 0 3 6 9 12 15 0 20 40 60 80 100 120 QG ,TotalGateCharge(nC) VDS ,Drain-to-SourceVoltage(V) Fig7.Gate Charge Characteristics Fig8.TypicalCapacitance Characteristics 100 1 0.1 0.1 0.01 0.01 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 VDS ,Drain-to-SourceVoltage(V) t,PulseWidth(s) Fig9.MaximumSafe Operating Area Fig10.EffectiveTransientThermal Impedance Dutyfactor=0.5 0.2 0.1 0.05 0.02 0.01 PDM t T SinglePulse Duty factor = t/T Peak Tj= PDMx Rthja + Ta Rthja = 125℃/W Crss Coss Ciss 1mAID= IS(A)ID (A) VGS ,GatetoSourceVoltage(V) NormalizedV GS(th)NormalizedThermal Response(Rthja) C(pF) Tj=150oC Tj=25oC All d ata sheet.com

www.doingter.cn — 5 — oC 5oCj=2T 150Tj= VDS=V ID ,DrainCurrent (A) 20 4 15 3 10 2 5 1 0 1 2 3 4 5 6 0 25 50 75 100 125 150 VGS ,Gate-to-SourceVoltage(V) TA ,AmbientTemperature ( o C) Fig11. Transfer Characteristics Fig12.DrainCurrentv.s.Ambient Temperature 1.6 1.2 0.8 0.4 3.2 2.4 1.6 0.8 -100 -50 0 50 100 150 0 50 100 150 Tj ,JunctionTemperature( o C) TA ,AmbientTemperature( o C) Fig13. Normalized BV DSS v.s. Junction Fig14.TotalPowerDissipation Temperature 200 180 160 140 120 100 0 3 6 9 12 ID ,DrainCurrent (A) Fig15.Typ.Drain-SourceonState Resistance RDS(ON)(m Ω) NormalizedBV DSS ID ,DrainCurrent (A) PD,PowerDissipation(W) I= 1mA D Tj =25oC 4.5V V =10V GS All d ata sheet.com

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