AP18N20GP-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=18A,RDS(ON)<165mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID G Continuous Drain Current-TC=25℃ 18 A Continuous Drain Current-TC=100℃ 13 EAS Single Pulse Avalanche Energy 125 mJ IDM DrainCurrent- PulsedC 45 A IAS AvalancheCurrent C (L=10mH) 9.5 A PD Power Dissipation,TC=25℃B 212 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case(Steady-State) 0.59 ℃/W All d ata sheet.com
www.doingter.cn — 2 — R Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 3 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=1A --- 120 165 mΩ VGS=4.5V,ID=1A --- 150 180 mΩ Dynamic Characteristics Rg Gateresistance VDS=0V, VGS=0V, f=1MHz --- 6.5 ---- Ω Ciss Input Capacitance --- 800 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 100 --- pF Crss Reverse Transfer Capacitance --- 60 --- Switching Characteristics td(on) Turn-On Delay Time VGS=10V ,VDS=100V, RL=5.5 Ω,RGEN=3Ω --- 8 --- ns tr Rise Time --- 10 --- ns td(off) Turn-Off Delay Time --- 30 --- ns tf Fall Time --- 4 --- ns Qg Total Gate Charge --- 27 40 nC Qgs Gate-Source Charge VGS=10V, VDS=100V, --- 7 --- nC Qgd Gate-Drain “Miller” Charge ID=18A --- 3 --- nC Drain-Source Diode Characteristics All d ata sheet.com
VSD Source-Drain Diode Forward Voltage ID=9A --- --- 1.45 V trr BodyDiode Reverse RecoveryTime IF=18AdI/dt=500A/ μs --- 60 80 ns Qrr BodyDiode Reverse RecoveryCharge --- 800 --- nC Notes: A:The value of RθJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limitfor cases where additional heatsinking is used. C:Repetitive rating, pulse width limited by junction temperatureTJ(MAX)=150°C. D.The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. ThestaticcharacteristicsinFigures 1to6areobtainedusing<300μspulses,dutycycle0.5%max. F.These curves are based on the junction-to-case thermal impedence which is measured with the devicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureofT J(MAX)=150°C. G.The maximum current rating is limited bybond-wires. Typical Characteristics： (TA=25℃ unless otherwise noted) www.doingter.cn — 3 All d ata sheet.com
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