AP18N20GJ-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — G D S Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with lowgate charge. D It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=18A,RDS(ON)<135mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 18 AContinuous Drain Current-TC=100℃ 11.45 Pulsed Drain Current1 72 EAS Single Pulse Avalanche Energy 320 mJ PD Power Dissipation,TC=25℃ 69.4 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case --- ℃/W RƟJA Thermal Resistance,Junction to Ambient --- All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 3 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=9A --- 4.8 6 mΩ VGS=0V,ID=0A --- --- --- GFS Forward Transconductance VDS=30V, ID=9A --- 13 --- S Dynamic Characteristics Ciss Input Capacitance --- 1215 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 162 --- pF Crss Reverse Transfer Capacitance --- 28 --- Switching Characteristics td(on) Turn-On Delay Time3 VDD=100V, ID=18A, VGS=10V,RGEN=5Ω --- 9 --- ns tr Rise Time2,3 --- 38.8 --- ns td(off) Turn-Off Delay Time --- 30.8 --- ns tf Fall Time2,3 --- 50 --- ns Qg Total Gate Charge3 --- 24.5 --- nC Qgs Gate-Source Charge VGS=10V, VDD=160V, --- 5.24 --- nC Qgd Gate-Drain “Miller” Charge ID=18A --- 7.46 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=9A --- --- 1.4 V All d ata sheet.com
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case