AP18N20GI DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=18A,RDS(ON)<1.8Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TC=25℃ 18 A Continuous Drain Current-TC=100℃ 11.9 EAS Single Pulse Avalanche Energy(Note1) 250 mJ IAR Avalanche Current (Note2) 18 A PD Power Dissipation 139 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.1 ℃/W G D S All d ata sheet.com
www.doingter.cn — 2 — RƟJA Thermal Resistance,Junction to Ambient 62.5 ℃/W Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=10A --- --- 1.8 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25v, VGS=0V, f=1MHz --- 800 1050 pFCoss Output Capacitance --- 185 250 Crss Reverse Transfer Capacitance --- 20 30 Switching Characteristics td(on) Turn-On Delay Time VDD=100V,.ID=18A RG=25Ω. (Note3,4) --- 16 40 ns tr Rise Time --- 133 275 ns td(off) Turn-Off Delay Time --- 38 85 ns tf Fall Time --- 62 135 ns Qg Total Gate Charge VGS=10V, VDS=160V ID=18A. (Note3,4) --- 20 26 nC Qgs Gate-Source Charge --- 5.6 --- nC Qgd Gate-Drain Charge --- 10 --- nC Drain-Source Diode Characteristics All d ata sheet.com
www.doingter.cn — 5 — 10 -1 t1 , Sq u a r e W a v e P uls e D u r a tio n [ s e c ] Figure 11-2. Transient Thermal Response Curve 0086-0755-8278-9056 D= 0 . 5 0.2 0.1 0.05 ※ N o te s : 2. D uty Facto r, D =t 1/t2 3. TJM - TC = PDM * Z JC (t) 0.02
0.01 PDM
Z(t), Thermal Response JC All d ata sheet.com