AP180N08BPT APME | Alldatasheet

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85V N-Channel Enhancement Mode MOSFET AP180N08BP/T REV1.0 永源微電子科技有限公司

Description

The AP180N08BP/T uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 85V ID =180A RDS(ON) < 3.0mΩ VGS=10V （Type：2.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) TO-220-AP180N08BP 3L 10AP180N08BP XXX YYYY 00 TO-263-AP180N08BT 3L AP180N08BT XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 85 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 180 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 140 A IDM Pulsed Drain Current 794 A EAS Single Pulse Avalanche Energy 900 mJ PD@TC=25℃ Total Power Dissipation4 268 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 34 ℃/W RθJC Thermal Resistance Junction-Case 0.47 ℃/W

85V N-Channel Enhancement Mode MOSFET AP180N08BP/T REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage VGS=0V, ID=250uA 85 91 V VGS(th ) Gate threshold voltage VDS=VGS,ID=250uA Tj=25°C 2.0 3.0 4.0 V IDSS Zero gate voltage drain current VDS=80V,VGS=0V Tj=25°C - - 1 μA IDSS Zero gate voltage drain current VDS=80V,VGS=0V Tj=125°C - - - 5 μA IGSS Gate-source leakage current VGS=20V,VDS=0V - - 100 nA RDS(on) Drain-source on-state resistance VGS=10V, ID=20A,Tj=25°C - 2.5 3.0 mΩ gfs Transconductance VDS=5V,ID=40A - 128 - S Ciss Input Capacitance VGS=0V, VDS=40V, f=1MHz - 6396 - pF Coss Output Capacitance - 1224 - pF Crss Reverse Transfer Capacitance - 23 - pF QG Gate Total Charge VGS=10V, VDS=40V,ID=20A - 91 - nC Qgs Gate-Source charge - 33 - nC Qgd Gate-Drain charge - 18 - nC td(on) Turn-on delay time Tj=25°C, VGS=10V, VDS=40V, RL=3Ω - 31 - ns tr Rise time - 35 - ns td(off) Turn-off delay time - 61 - ns tf Fall time - 31 - ns RG Gate resistance VGS=0V, VDS=0V, f=1MHz - 0.8 - Ω VSD Body Diode Forward Voltage VGS=0V,ISD=20A - 0.75 1.2 V trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/μs - 75 - ns Qrr Body Diode Reverse Recovery Charge - 155 - nC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=64VGS=10V,L=0.1mH,IAS=60A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

85V N-Channel Enhancement Mode MOSFET AP140N08NF REV1.0 永源微電子科技有限公司 Package Mechanical Data:TO-220C-3L Symbol Dim in mm Min Typ Max A 4.25 4.5 4.7 A1 1.15 1.3 1.45 A2 2.15 2.35 2.55 b 0.65 0.8 0.95 b1 1.15 1.35 1.55 c 0.35 0.5 0.65 D 14.3 15.3 16.3 D1 8.8 9.1 9.4 D2 6.3REF E 9.7 10 10.3 E3 7 8 9 e 2.54BSC e1 5.08BSC L 12.7 13.5 13.9 L1 3.1 3.4 H 6 6.5 6.95 Q 2.6 2.8 3 ϕ 3.4 3.6 3.8

85V N-Channel Enhancement Mode MOSFET AP180N08BP/T REV1.0 永源微電子科技有限公司 Package Mechanical Data:TO-263C-3L Symbol Dim in mm Min Typ Max A 4.37 4.57 4.77 A1 0 0.25 A2 1.22 1.27 1.42 A3 2.49 2.69 2.89 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D 9.86 10.16 10.36 D1 8.4REF D2 7.073REF E 8.5 8.7 8.9 E1 1.07 1.27 1.47 e 2.54BSC L 17.7 15.1 15.5 L1 1.4 1.55 1.7 L2 2 2.3 2.6 H 6 6.5 6.95 Q 2.6 2.8 3 ϕ 3.4 3.6 3.8

85V N-Channel Enhancement Mode MOSFET AP140N08NF REV1.0 永源微電子科技有限公司

85V N-Channel Enhancement Mode MOSFET AP180N08BP/T REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2024/12/31 Initial release