AP12N90F APME | Alldatasheet
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900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司
Description
The AP12N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 900V ID =12A RDS(ON) < 1100mΩ @ VGS=10V （Type：950mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP12N90F TO-220F-3L AP12N90F XXX YYYY 1000 AP12N90P TO-220-3L AP12N90P XXX YYYY 1000 AP12N90T TO-263-3L AP12N90T XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Units VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ± 30 V ID@TC=25℃ Drain Current, VGS @ 10V 12 A ID@TC=100℃ Drain Current, VGS @ 10V 5.8 A IDM Drain Current - Pulsed 36 A EAS Single Pulsed Avalanche Energy 576 mJ IAR Avalanche Current 9 A EAR Repetitive Avalanche Energy 53 mJ dv/dt Peak Diode Recovery dv/dt 5 V/ns PD Power Dissipation 31.2 W Tj ,Tstg Operating and Storage Temperature Range -55 to +150 oC RθJC Thermal Resistance, Junction-to-Case 4.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient 48.0 °C/W
900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 900 1000 V ΔBVDSS/ ΔTJ Breakdown Voltage TemperatureCoefficient ID=250μA, Referenced to25°C 0.74 V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V 1 μA IDSS Zero Gate Voltage Drain Current VDS = 720 V, TC = 125°C 10 μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID =250 uA 2.0 4.0 V RDS(On) Drain-Source On-state Resistance VGS=10 V, ID =1.0 A, 950 1100 mΩ gFS Forward Transconductance VDS = 40 V, ID = 4.5 A 11 S Ciss Input Capacitance VDS=25 V, VGS=0V, f=1.0 MHz 2752 pF Coss Output Capacitance 206 pF Crss Reverse Transfer Capacitance 36 pF td(on) Turn On Delay Time VDD=450 V, ID=9A, RG=25Ω 33 ns tr Rising Time 57 ns td(off) Turn Off Delay Time 270 ns tf Fall Time 91 ns Qg Total Gate Charge VDS=450V, ID=9A, VGS=10V 80 nC Qgs Gate-Source Charge 12 nC Qgd Gate-Drain Charge 38 nC ISM Maximum Pulsed Drain-Source Diode Forward Current 36 A VSD Diode Forward Voltage VGS= 0 V, IS = 9 A 1.4 V trr Reverse Recovery Time VGS=0V, IS=9A, dIF/dt=100 A/μs Note4) 533 ns Qrr Reverse Recovery Charge 6.2 μC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . L=4.1Mh IAS=18A, VDD=50V, RG=25Ω, Starting TJ = 25 ºC 3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司 Typical Characteristics
900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司
900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司 Package Mechanical Data
900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
900V N-Channel Enhancement Mode MOSFET AP12N90F/P/T REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2022/1/31 Initial release