AP12H02TS APME | Alldatasheet
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Technical content
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8
Description
Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage V ID@TC=25℃ Drain Current, VGS @ 4.5V 12 A ID@TC=100℃ Drain Current, VGS @ 4.5V 7 A ID@TA=25℃ Drain Current, VGS @ 4.5V3 10 A ID@TA=70℃ Drain Current, VGS @ 4.5V3 8.5 A IDM Pulsed Drain Current1 80 A PD@TC=25℃ Total Power Dissipation 15.6 W PD@TA=25℃ Total Power Dissipation3 5 W EAS Single Pulse Avalanche Energy4 7.2 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rthj-c Maximum Thermal Resistance, Junction-case 8 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient3 25 ℃/W The AP12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
applications
VDS = 20V,ID =12A RDS(ON) < 12.5mΩ@ VGS=4.5V N-Channel VDS = 20V,ID =12A RDS(ON) < 12.5mΩ@ VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) 永源微電子科技有限公司 ±12
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V RDS(ON) Static Drain-Source On- Resistance2 - 10 12.5 mΩ VGS=2.5V, ID=12A - 12 19 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 V gfs Forward Transconductance VDS=5V, ID=20A - 50 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage - - nA Qg Total Gate Charge ID=20A VDS=10V VGS=4.5V - 16 25.6 nC Qgs Gate-Source Charge - 3 - nC Qgd Gate-Drain ("Miller") Charge - 4.5 - nC td(on) Turn-on Delay Time VDS=10V ID=1A RG=3.3Ω VGS=5V - 10 - ns tr Rise Time - 13 - ns td(off) Turn-off Delay Time - 28 - ns tf Fall Time - 7 - ns Ciss Input Capacitance VGS=0V VDS=10V f=1.0MHz - 1400 2240 pF Coss Output Capacitance - 170 - pF Crss Reverse Transfer Capacitance - 135 - pF Rg Gate Resistance f=1.0MHz - 1 2 Ω VSD Forward On Voltage2 IS=20A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=12A, VGS=0V, dI/dt=100A/µs - 8.5 - ns Qrr Reverse Recovery Charge - 2.5 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 60 ℃/W at steady state. 4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω, VGS=10V VGS=4.5V, ID=12A 永源微電子科技有限公司 VGS=±12V, VDS=0V ±100
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0123456 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =2 5o C 5.0V 4.5V 3.5V 2.5V V G = 2.0V 01234 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) 5.0V 4.5V 3.5V 2.5V V G = 2.0V T C = 150o C 123456 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =12A T C =25 o C 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2 0A V G = 4.5 V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D =1mA 永源微電子科技有限公司
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (Rthjc) 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T C =25 o C Single Pulse 10us 100us 1ms 10ms DC 0 8 16 24 32 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2 0A V DS =10V 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 01234 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A)T j =150 o C T j =25 o C V DS =5V T j = -55 o C Operation in this area limited by RDS(ON) Q VG 4.5V QGS QGD QG Charge 永源微電子科技有限公司
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature Fig 15. Typ. Drain-Source on State Resistance 0 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS I D =1mA 0 1 02 03 04 05 0 I D , Drain Current (A) RDS(ON) (m T j =25 o C 2.5V V GS =4.5V 永源微電子科技有限公司
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Reflow Soldering The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness 2.5 mm or with a volume 350 mm3 so called thick/large packages). The top-surface temperature of the packages should preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm3 so called thin/small packages). Stage Condition Duration 1’st Ram Up Rate max3.0+/-2 /sec - Preheat 150 ~200 60~180 sec 2’nd Ram Up max3.0+/-2 /sec - Solder Joint 217 above 60~150 sec Peak Temp 260 +0/-5 20~40 sec Ram Down rate 6 /sec max - Wave Soldering: Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. Manual Soldering: Fix the component by firs t soldering two diagonally -opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 永源微電子科技有限公司
20V N+N-Channel Enhancement Mode MOSFET AP12H02TS Rve:3.8 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change witho 永源微電子科技有限公司