AP1266 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VB IR = 10 µA 200 V CT V = 50 V f = 1.0 MHz 1.5 pF RS IF = 50 mA f = 100 MHz 0.6 Ohms TL IF = 10 mA IR = 6.0 mA 3.0 µµµµS I-REGION I-REGION WIDTH 3.0 mS SILICON PIN DIODE AP1266 DESCRIPTION: The AP1266 is a Passivated Epitaxial Silicon PIN Diode in a Hermetically Sealed Glass Package Designed for Large Signal Switches. MAXIMUM RATINGS I 100 mA V 200 V PDISS 1.0 W @ TC = 25 O C TJ -65 O C to +175 O C TSTG -65 O C to +175 O C TSOLD 200 O C PACKAGE STYLE -11