AP110N03D APME | Alldatasheet
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30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司
Description
The AP110N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =110 A RDS(ON) < 4mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP110N03D TO-252-3L AP110N03D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Steady State Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 110 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 68 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 19 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 16 A IDM Pulsed Drain Current2 192 A EAS Single Pulse Avalanche Energy3 144.7 mJ IAS Avalanche Current 53.8 A PD@TC=25℃ Total Power Dissipation4 62.5 W PD@TA=25℃ Total Power Dissipation4 2.42 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Case1 2.4 ℃/W
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.0213 --- V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=30A --- 2.3 4 mΩ VGS=4.5V , ID=15A --- 4.3 6 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.73 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A 20.08 26.5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.4 --- Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 70 --- nC Qgs Gate-Source Charge --- 12 --- Qgd Gate-Drain Charge --- 17 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 11 --- ns Tr Rise Time --- 120 --- Td(off) Turn-Off Delay Time --- 25 --- Tf Fall Time --- 60 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3500 --- pF Coss Output Capacitance --- 386 --- Crss Reverse Transfer Capacitance --- 358 --- IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 90 A ISM Pulsed Source Current2,5 --- --- 360 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4 .The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 120 150 180 210 0.3 0.6 0.9 1.2 1.5 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V V GS =3V 2.0 3.0 4.0 5.0 6.0 VGS (V) RDSON (mΩ) ID=12A 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=175℃ TJ=25℃ QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID=15A 0.5 1.5 -50 25 100 175 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 25 100 175 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 VDS (V) ID (A) 10us 100us 10ms 100ms DC TC=25℃ Single Pulse 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=
2 L x IAS
Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 Package Mechanical Data：TO-252-3L Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D TO-252 Reel Spectification-TO-252 W EF D0 P0 P2 T A A A A B B B B Dimensions Millimeters InchesRef. W E F T 15.90 1.65 7.40 1.40 16.10 1.85 7.60 1.60 0.626 0.065 0.291 0.055 0.634 0.073 0.299 0.063 1.40 1.60 7.90 10.45 10.60 0.411 0.417 0.24 0.27 0.009 0.011 0.055 0.063 3.90 4.10 6.90 0.271 10P0 0.154 0.161 8.10 0.311 0.319 1.90 2.10 0.075 0.083 0.10 0.004 40.00 1.575 2.78 0.109 Φ329 Φ13 16.00 1.75 7.50 1.50 1.50 4.00 8.00 2.00 10.50 0.630 0.069 0.295 0.059 0.059 0.157 0.315 0.079 0.413 6.85 7.00 2.68 2.88 0.270 0.276 0.105 0.113 39.80 40.20 1.567 1.583
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve3.8 2018/1/31 Initial release Rve3.9 2019/12/01 Reduce RDS(on)
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 Test Report For 30PCS（30pcs 典型測試報告） 3.2 3.4 3.6 3.8 4.2 4.4 4.6 4.8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 RDS(on)阻抗值 No編號 RDS-4.5V（mΩ） RDS-4.5V 2.2 2.4 2.6 2.8 3.2 3.4 3.6 3.8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 RDS(on)阻抗值 No編號 RDS-10V（mΩ） RDS-10V
30V N-Channel Enhancement Mode MOSFET AP110N03D Rve3.9 臺灣永源微電子科技有限公司 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 VDS（耐壓值） No編號 VDS（V） DS 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.1 2.2 2.3 2.4 2.5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 No編號 VTH（V） TH VTH（開啓電壓）