AP100N20MP APME | Alldatasheet
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200V N-Channel Enhancement Mode MOSFET AP100N20MP RVE1.0 永源微電子科技有限公司
Description
The AP100N20MP uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 200V ID =100A RDS(ON) < 20mΩ @ VGS=10V (Type：17mΩ) Application Load Switch Power management Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N20MP TO-247-3L AP100N20MP XXX YYYY 360 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDSS Drain-to-Source Voltage 200 V ID@TA=25℃ Continuous Drain Current VGS @ 10V 100 A ID@TA=70℃ Continuous Drain Current VGS @ 10V 52 A IDMa1 Pulsed Drain Current (pulse width limited by TJM) 300 A VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 300 mJ EAra1 Avalanche Energy, Repetitive 75 mJ IAR a1 Avalanche Current 45 A dv/dta2 Peak Diode Recovery dv/dt 5.0 V/ns PD Power Dissipation 375 W TJ，Tstg Operating Junction and Storage Temperature Range 175，–55 To +175 ℃ RθJC Thermal Resistance, Junction-to-Case 0.45 ℃/ W RθJA Thermal Resistance, Junction-to-Ambient 60 ℃/ W
200V N-Channel Enhancement Mode MOSFET AP100N20MP RVE1.0 永源微電子科技有限公司 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 200 220 -- V IDSS Drain to Source Leakage Current VDS=200V, VGS=0V,Ta=25℃ -- -- 1.0 µA VDS=200V, VGS=0V,Ta=125℃ -- -- 100 µA IGSS(F) Gate to Source Forward Leakage VGS=+20V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS=-20V -- -- -100 nA RDS(ON) Drain-to-Source On-Resistance VGS=10V, ID=40A -- 17 20 mΩ VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250µA 3.6 4.5 5.0 V gfs Forward Trans conductance VDS=25V, ID=40A 50 65 -- S Rg Gate Resistance VGS=0V VDS open f=1.0MHz 1.3 Ω Ciss Input Capacitance VGS=0V VDS=25V f=1.0MHz -- 7500 -- pF Coss Output Capacitance -- 500 -- pF Crss Reverse Transfer Capacitance -- 210 -- pF td(ON) Turn-on Delay Time ID=40A, VDS=50V VGS=10V, Rg=2.5Ω -- 45 -- ns tr Rise Time -- 70 -- ns td(OFF) Turn-Off Delay Time -- 110 -- ns tf Fall Time -- 90 -- ns Qg Total Gate Charge ID=40A, VDD=100V VGS=10V -- 85 -- nC Qgs Gate to Source Charge -- 15 -- nC Qgd Gate to Drain (“Miller”) Charge -- 25 -- nC ISD Continuous Source Current (Body Diode) -- -- 75 A ISM Maximum Pulsed Current (Body Diode) -- -- 300 A VSD Diode Forward Voltage IS=40A, VGS=0V -- -- 1.2 V trr Reverse Recovery Time IS=30A,Tj=25℃，VDD=50V dIF/dt=100A/μs, VGS=0V -- 110 -- ns Qrr Reverse Recovery Charge -- 0.55 -- uC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.3mH, RG=25Ω, VDD=50V，VGS=10V 4、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
200V N-Channel Enhancement Mode MOSFET AP100N20MP RVE1.0 永源微電子科技有限公司 Characteristics Curve：
200V N-Channel Enhancement Mode MOSFET AP100N20MP RVE1.0 永源微電子科技有限公司
200V N-Channel Enhancement Mode MOSFET AP100N20MP RVE1.0 永源微電子科技有限公司
200V N-Channel Enhancement Mode MOSFET AP100N20MP RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-247-3L Dim. Min. Max. A 15.0 16. 0 B 20.0 21.0 C 41.0 42.0 D 5.0 6.0 E 4.0 5.0 F 2.5 3.5 G 1.75 2.5 H 3.0 3.5 I 8.0 10.0 J 4.9 5.1 K 1.9 2.1 L 3.5 4.0 M 4.75 5.25 N 2.0 3.0 O 0.55 0.75 P Typ 5.08 Q 1.2 1.3
200V N-Channel Enhancement Mode MOSFE AP100N20MP RVE1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
200V N-Channel Enhancement Mode MOSFE AP100N20MP RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2020/10/31 Initial release