AP100N20BFPT APME | Alldatasheet

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200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司

Description

The AP100N20F/P/T uses advanced APM-SGT IItechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 200V ID =120A RDS(ON) < 11mΩ @ VGS=10V (Type：9.5mΩ) Application DC/DC Converter Power Management Switches BMS/UPS Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N20BF TO-220F-3L AP100N20BF XXX YYYY 1000 AP100N20BP TO-220-3L AP100N20BP XXX YYYY 1000 AP100N20BT TO-263-3L AP100N20BT XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 120 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 79 A IDM Pulsed Drain Current 500 A EAS Single Pulse Avalanche Energy 1140 mJ IAS Avalanche Current 45 A PD@TC=25℃ Total Power Dissipation4 278 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 0.45 ℃/W RθJC Thermal Resistance Junction-Case 40 ℃/W

200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 200 V IDSS Zero Gate Voltage Drain Current VDS = 160V, VGS = 0V 1.0 uA IGSS Gate-Body Leakage Current VDS = 0V, VGS = ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.0 4.0 V RDS(ON) Static Drain-Source ON-Resistance VGS = 10V, ID = 20A 9.5 11 mΩ gFS Forward Transconductance VDS = 5V, ID = 20A 105 S IS Diode Continuous Current TC = 25°C 118 A Ciss Input Capacitance VGS = 0V, VDS = 100V, f = 1MHz 4900 pF Coss Output Capacitance 410 pF Crss Reverse Transfer Capacitance 20 pF Rg Gate Resistance VGS = 0V, VDS= 0V, f = 1MHz 3.6 Ω Qg Total Gate Charge (@ VGS = 10V) V GS =10V, VDS =100V, ID =50A 76 nC Qgs Gate Source Charge 28 nC Qgd Gate Drain Charge 17 nC tD(on) Turn-On DelayTime V GS =10V, V DD =100V, RG_ext =2.7Ω 23 ns tr Turn-On Rise Time 46 ns tD(off) Turn-Off DelayTime 63 ns tf Turn-Off Fall Time 20 ns trr Body Diode Reverse Recovery Time IF=50A, dIF/dt = 100A/µs 130 ns Qrr Body Diode Reverse Recovery Charge IF=50A, dIF/dt = 100A/µs 670 nC VSD Diode Forward Voltage IS = 1A, VGS = 0V 0.75 1.2 V Notes: 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2% 3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=45A 4、The power dissipation is limited by 150°C junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司 Package Mechanical Data:TO-220F-3L Symbol Dim in mm Min Typ Max A 4.5 4.7 5.0 A1 2.34 2.54 2.84 A2 2.4 2.9 3.4 b 0.7 0.8 0.95 b1 1.05 1.35 1.55 c 0.4 0.5 0.65 D 15.57 15.87 16.17 H 6.7REF E 9.86 10.16 10.46 e 2.54BSC e1 5.08BSC L 12.65 12.98 13.3 L1 2.78 3.08 3.38 F 3.15 3.3 3.55 ϕ 3 3.3 3.65

200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司 Package Mechanical Data:TO-220C-3L Symbol Dim in mm Min Typ Max A 4.25 4.5 4.7 A1 1.15 1.3 1.45 A2 2.15 2.35 2.55 b 0.65 0.8 0.95 b1 1.15 1.35 1.55 c 0.35 0.5 0.65 D 14.3 15.3 16.3 D1 8.8 9.1 9.4 D2 6.3REF E 9.7 10 10.3 E3 7 8 9 e 2.54BSC e1 5.08BSC L 12.7 13.5 13.9 L1 3.1 3.4 H 6 6.5 6.85 Q 2.6 2.8 3 ϕ 3.4 3.6 3.8

200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司 Package Mechanical Data:TO-263C-3L Symbol Dim in mm Min Typ Max A 4.37 4.57 4.77 A1 0 0.25 A2 1.22 1.27 1.42 A3 2.49 2.69 2.89 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D 9.86 10.16 10.36 D1 8.4REF D2 7.073REF E 8.5 8.7 8.9 E1 1.07 1.27 1.47 e 2.54BSC L 17.7 15.1 15.5 L1 1.4 1.55 1.7 L2 2 2.3 2.6 H 6 6.5 6.85 Q 2.6 2.8 3 ϕ 3.4 3.6 3.8

200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

200V N-Channel Enhancement Mode MOSFET AP100N20F/P/T REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2023/3/5 Initial release