AP100N08CMP APME | Alldatasheet
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80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司
Description
The AP100N08CMP is silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 80V ID =100A RDS(ON) < 15mΩ @ VGS=10V （Type：13mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N08CMP TO-247-3L AP100N08CMP XXX YYYY 1980 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 70 A IDM Pulsed Drain Current 480 A EAS Single Pulse Avalanche Energy 1054 mJ IAS Avalanche Current 60 A PD@TC=25℃ Total Power Dissipation4 300 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-Ambient 0.50 ℃/W RθJC Thermal Resistance Junction-Case 40 ℃/W
80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 80 - - V VGS(TH) Gate Threshold Voltage VDS= VGS, ID= 1mA 1.2 1.7 2.0 V RDS(ON) Drain-Source On-stage Resistance VGS= 4V; ID=30A - 13 15 mΩ VGS= 10V; ID=30A - - 11 mΩ IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 - - ±10 uA IDSS Zero Gate Voltage Drain Current VDS= 80V, VGS= 0V, TJ= 25ºC - - 100 μA Ciss Input Capacitance VGS = 0V, VDS = 25V, f = 1.0MHz - 3795 - pF Coss Output Capacitance - 1456 - Crss Reverse Transfer Capacitance - 1101 - RG Gate resistance f = 1.0MHz open drain - 0.75 - Ω Qg Total Gate Charge VDD = 64V, ID = 100A, VGS =10V - 338 - nC Qgs Gate-Source Charge - 12 - Qgd Gate-Drain Charge - 175 - td(on) Turn-on Delay Time VDD = 40V, ID = 100A, RG = 25Ω - 45 - ns tr Turn-on Rise Time - 178 - td(off) Turn-off Delay Time - 1062 - tf Turn-off Fall Time - 830 - ISD Continuous Source Current TC = 25 ºC - - 100 A ISM Pulsed Source Current - - 400 VSD Diode Forward Voltage IS=60A; VGS=0V - - 1.7 V trr Reverse Recovery Time VDD = 40V,IF = 30A, diF/dt =100A /μs - 210 - ns Qrr Reverse Recovery Charge - 1.5 - uC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=25VGS=10V,L=0.4mH,IAS=60A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司 Typical Characteristics
80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司
80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司 Package Mechanical Data-TO-247-3L Symbol Dim in mm Min Max A 15.0 16.0 B 20.0 21.0 C 41.0 42.0 D 5.0 6.0 E 4.0 5.0 F 2.5 3.5 G 1.75 2.5 H 3.0 3.5 I 8.0 10.0 J 4.9 5.1 K 1.9 2.1 L 3.5 4.0 M 4.75 5.25 N 2.0 3.0 O 0.55 0.75 P Typ 5.08 Q 1.2 1.3
80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司
80V N-Channel Enhancement Mode MOSFET AP100N08CMP REV1.1 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2020/10/31 Initial release REV1.1 2024/4/26 Change logo