AP1000A ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VB IR = 10 µA 100 V CJ VR = 6.0 V f = 1.0 MHz 0.05 pF RS IF = 20 mA f = 1.0 GHz IF = 100 mA 2.6
2.0 Ohms
TL IF = 10 mA IR = 6.0 mA 100 nS CP f = 1.0 MHz 0.15 pF LS 2.5 nH SILICON PIN DIODE AP1000A DESCRIPTION: The AP1000A is a Diffused Epitaxial Silicon PIN Diode. MAXIMUM RATINGS IC 100mA VCE 100 V PDISS 500 mW @ TC = 25 O C TJ -65 O C to +150 O C TSTG -65 O C to +175 O C θθθθJC 50 O C/W TSOLD 5.0 Sec./200 O C PACKAGE STYLE 15