AP0504GH-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=40V,ID=80A,RDS(ON)<5.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 80 AContinuous Drain Current-TC=100℃ 50 Pulsed Drain Current1 320 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation,TC=25℃ 88 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.7 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 D G S All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.6 2.5 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=20A --- 4.2 5.5 mΩ VGS=4.5V,ID=10A --- 5.3 7 GFS Forward Transconductance VDS=10V, ID=10A --- 16 --- S Dynamic Characteristics Ciss Input Capacitance --- 2410 3600 Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 233 400 pF Crss Reverse Transfer Capacitance --- 152 230 Switching Characteristics td(on) Turn-On Delay Time2,3 VDD=20V, ID=1A, VGS=10V,RGEN=3.3Ω --- 14.2 28 ns tr Rise Time2,3 --- 18.3 36 ns td(off) Turn-Off Delay Time2,3 --- 38.8 76 ns tf Fall Time2,3 --- 13.9 28 ns Qg Total Gate Charge3 --- 25 50 nC Qgs Gate-Source Charge VGS=4.5V, VDS=32V, --- 6.5 13 nC Qgd Gate-Drain “Miller” Charge ID=10A --- 12.1 24 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A --- --- 1 V All d ata sheet.com
www.doingter.cn — 3 — Ls ContinuousSource Current VG=VD=0V ,Force Current --- --- 80 A lsm PulsedSource Current --- --- 160 A Notes: 1. RepetitiveRating:Pulsed width limitedbymaximumjunction temperature. 2. Thedata testedbypulsed ,pulse width ≦ 300us,dutycycle ≦ 2%. 3. Essentiallyindependent ofoperatingtemperature. Typical Characteristics： (TC=25℃ unless otherwise noted) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Gate Threshold Voltage(V) ID , Continuous Drain Current (A) Normalized On Resistance (m)VGS ,Gate to Source Voltage (V) All d ata sheet.com
www.doingter.cn — 4 — Fig.7 Switching Time Waveform Fig.8 EAS Waveform Square WavePulse Duration (s) VDS , Drain to Source Voltage(V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area 0086-0755-8278-9056 Normalized Thermal Response (RθJC) ID ,Continuous Drain Current (A) All d ata sheet.com