AP03N70H-H-HF DOINGTER | Alldatasheet
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www.doingter.cn — —1 Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=700V,ID=2A,RDS(ON)<6.3Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TJ=25℃ 2 A Continuous Drain Current-TJ=100℃ 1.25 EAS Single Pulse Avalanche Energy(note1) 140 mJ IAR Avalanche Current(note2) 2 A PD Power Dissipation,TJ=25℃ 50 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.5 ℃/W D G S All d ata sheet.com
www.doingter.cn — —2 RƟJA Thermal Resistance Junction to mbient 110 ℃/W Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 700 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=700V --- --- 10 μA VDS=560V,TJ=125℃ --- --- 100 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 3 --- 5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=1A --- --- 6.3 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 260 --- pFCoss Output Capacitance --- 36 --- Crss Reverse Transfer Capacitance --- 4.7 --- Switching Characteristics td(on) Turn-On Delay Time VDD=350V,ID=2A, RG=25Ω (Note 3,4) --- --- 30 ns tr Rise Time --- --- 80 ns td(off) Turn-Off Delay Time --- --- 50 ns tf Fall Time --- --- 70 ns Qg Total Gate Charge VGS=10V, VDS=560V, ID=2A(Note 3,4) --- 9 12 nC Qgs Gate-Source Charge --- 1.7 --- nC Qgd Gate-Drain “Miller” Charge --- 4.4 --- nC Drain-Source Diode Characteristics All d ata sheet.com
Figure 11. Transient Thermal Response Curve