AP03N40AH-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=400V,ID=6A,RDS(ON)<1000mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 400 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 6 A Continuous Drain Current-TC=100℃ 3.6 Pulsed Drain Current2 --- EAS Single Pulse Avalanche Energy3 270 mJ PD Power Dissipation,TC=25℃4 48 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 1.71 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 62.5 D G S All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 400 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=400V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=3A --- --- 1000 mΩ VGS=4.5V,ID=0A --- --- --- GFS Forward Transconductance VDS=10V, ID=0A --- --- --- S Dynamic Characteristics Ciss Input Capacitance --- 480 610 Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 80 105 pF Crss Reverse Transfer Capacitance --- 15 20 Switching Characteristics3.4 td(on) Turn-On Delay Time VDD=200V, ID=6A, VGS=10V,RGEN=25Ω --- --- 35 ns tr Rise Time --- --- 140 ns td(off) Turn-Off Delay Time --- --- 5 ns tf Fall Time --- --- 85 ns Qg Total Gate Charge --- --- 20 nC Qgs Gate-Source Charge VGS=10V, VDS=320V, --- .3 --- nC Qgd Gate-Drain “Miller” Charge ID=6A --- 6.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=5.5A --- --- 1 V All d ata sheet.com
www.doingter.cn — 5 — 10 -1 t1, Squa reW av e Puls e D uration [s e c ] Figure 11-1. Transient Thermal Response Curve 0086-0755-8278-9056 D= 0 . 5 0.2 0.1 0. 05 ※ No te s : 1 .Zθ JC(t) = 1.7 1℃ /W M a x. 2 . D u ty F ac to r, D = t/t12 3 . TJM -T C= PDM* Zθ JC(t) 0.02
0.01 PDM
Z(t), T h erm al R espon s e θ JC All d ata sheet.com