AM90N15-20P

AM90N15-20P DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=150V,ID=100A,RDS(ON)< mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current- 100 A Continuous Drain Current-TC=100℃ 65 Pulsed Drain Current 300 EAS Single Pulse Avalanche Energy 272 mJ PD Power Dissipation 428 W TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 0.29 ℃/W RƟJA Thermal Resistance,Junction to Ambient 65 D S G AM 90N15-20P All d ata sheet.com

www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 150 V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=150V,Tj=25℃ --- 0.05 1 μA VGS=0V, VDS=150V,Tj=150℃ 20 IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- 10 100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 3 4 5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=50A --- 10 15 mΩ VGS=4.5V,ID=A --- 22 27 GFS Forward Transconductance VDS=25V, ID=30A --- 101 --- S Dynamic Characteristics Ciss Input Capacitance VDS=75V, VGS=0V, f=1MHz --- 3593 --- pF Coss Output Capacitance --- 331 --- Crss Reverse Transfer Capacitance --- 92 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=2A, RGEN=2.5Ω.VGS=10V --- 18 --- ns tr Rise Time --- 93 --- ns td(off) Turn-Off Delay Time --- 34 --- ns tf Fall Time --- 70 --- ns Rg 1.7 Ω Qg Total Gate Charge VGS=10V, VDS=30V, ID=30A --- 69 --- nC Qgs Gate-Source Charge --- 24 --- nC Qgd Gate-Drain “Miller” Charge --- 26 --- nC μA --- --- --- --- Gate resistanceGate resistance VGS=0V, VDS=0V,VGS=0V, VDS=0V, AM 90N15-20P Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com

www.doingter.cn — 3 — Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=50A --- 0.9 1.3 V Trr Reverse Recovery Time --- 70 --- NS Qrr Reverse Recovery Charge --- 233 --- NC Typical Characteristics： (TC=25℃ unless otherwise noted) IF=50A, dI/dt=100A/µ s C E B H E A B ID (A) VDS (V) L .#,.# # * VGS=6.0V 7.0 V 9.0V 10V 8.0V H E A C B ID (A) VGS (V) L # * 25°C VDS=5V 150°C H HL + * ; # $%# & VGS=10V B EL ; # $%# & ID=50A C E B H E A B ID (A) VDS (V) L .#,.# # * VGS=6.0V 7.0 V 9.0V 10V 8.0V H E A C B ID (A) VGS (V) L # * 25°C VDS=5V 150°C B F H E B A RDS(on) (mΩ) ID (A) HL + * ; # $%# & VGS=10V E A B E A B A C B F RDS(on) (mΩ) VGS (V) EL ; # $%# & 25°C ID=50A C E B H E A B ID (A) VDS (V) L .#,.# # * VGS=6.0V 7.0 V 9.0V 10V 8.0V H E A C B ID (A) VGS (V) L # * 25°C VDS=5V 150°C B F H E B A RDS(on) (mΩ) ID (A) HL + * ; # $%# & VGS=10V E A B E A B A C B F RDS(on) (mΩ) VGS (V) EL ; # $%# & 25°C ID=50A AM 90N15-20P All d ata sheet.com

www.doingter.cn — 4 — 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on)_Normalized Tj - Junction Temperature (° ) Fig 5: Rds(on) vs. Temperature VGS=10V ID=50A 100 1000 10000 100000 0 30 60 90 120 150 - Capacitance (PF) V (V) Fig 6: Capacitance Characteristics Crss Ciss Coss VGS=0V f=1MHz 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 RDS(on)_Normalized Tj -Junction Temperature (°C) Fig 5: Rds(on) vs. Temperature VGS=10V ID=50A 100 1000 10000 100000 0 30 60 90 120 150 - Capacitance (PF) VDS (V) Fig 6: Capacitance Characteristics Crss Ciss Coss VGS=0V f=1MHz 0 14 28 42 56 70 VGS (V) Qg (nC) Fig 7: Gate Charge Characteristics VDS=75V ID=50A 100 1000 IS - Diode Current(A) VSD - Diode Forward Voltage(V) Fig 8: Body-diode Forward Characteristics 25˚C 150˚C 400 450 Fig 9: Power Dissipation 120 140 Fig 10: Drain Current Derating 0 14 28 42 56 70 VGS (V) Qg (nC) Fig 7: Gate Charge Characteristics VDS=75V ID=50A 100 1000 IS - Diode Current(A) VSD - Diode Forward Voltage(V) Fig 8: Body-diode Forward Characteristics 25˚C 150˚C 100 150 200 250 300 350 400 450 0 25 50 75 100 125 150 Ptot (W) Tc - Case Temperature (°C) Fig 9: Power Dissipation 100 120 140 0 25 50 75 100 125 150 175 ID (A) Tc - Case Temperature (°C) Fig 10: Drain Current Derating VGS≥10V 0 14 28 42 56 70 VGS (V) Qg (nC) Fig 7: Gate Charge Characteristics VDS=75V ID=50A 100 1000 IS - Diode Current(A) VSD - Diode Forward Voltage(V) Fig 8: Body-diode Forward Characteristics 25˚C 150˚C 100 150 200 250 300 350 400 450 0 25 50 75 100 125 150 Ptot (W) Tc - Case Temperature (°C) Fig 9: Power Dissipation 100 120 140 0 25 50 75 100 125 150 175 ID (A) Tc - Case Temperature (°C) Fig 10: Drain Current Derating VGS≥10V AM 90N15-20P All d ata sheet.com

www.doingter.cn — 5 — 0.1 100 1000 0.1 1 10 100 ID (A) VDS (V) Fig 11: Safe Operating Area DC Single pulse Tc=25˚C Limited by Rds(on) 10us 100us 1ms 10ms 1us 0.1 100 1000 0.1 1 10 100 ID (A) VDS (V) Fig 11: Safe Operating Area DC Single pulse Tc=25˚C Limited by Rds(on) 10us 100us 1ms 10ms 1us 0.001 0.01 0.1 1E-05 0.0001 0.001 0.01 0.1 1 ZthJC (˚C/W) tp (sec) Fig 12: Max. Transient Thermal Impedance Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 0.001 0.01 0.1 1E-05 0.0001 0.001 0.01 0.1 1 ZthJC (˚C/W) tp (sec) Fig 12: Max. Transient Thermal Impedance Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) Single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 AM 90N15-20P All d ata sheet.com

www.doingter.cn — —6 est Circuit & Waveform AM 90N15-20P All d ata sheet.com

— —7 Package Outline: TO-220-3L AM 90N15-20P 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com