AM90N02-04D DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=90A,RDS(ON)<3.5mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current-TC=25℃ 90 A Continuous Drain Current-TC=100℃ 60 Pulsed Drain Current1 360 EAS Single Pulse Avalanche Energy2 340 mJ PD Power Dissipation,TC=25℃ 87 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.72 ℃/W D S G AM 90N02-04D All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=20V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±12V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.7 1.1 V RDS(ON) Drain-Source On Resistance3 VGS=4.5V,ID=30A --- 2.9 3.5 mΩ VGS=2.5V,ID=20A --- 4.1 5 GFS --- 40 --- s Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 2080 --- pF Coss Output Capacitance --- 280 --- Crss Reverse Transfer Capacitance --- 195 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, VGS=4.5V ,RGEN=3Ω --- 17 --- ns tr Rise Time --- 49 --- ns td(off) Turn-Off Delay Time --- 74 --- ns tf Fall Time --- 26 --- ns Qg Total Gate Charge VGS=10V, VDS=15V, ID=12 A --- 25 --- nC Qgs Gate-Source Charge --- 3 --- nC Qgd Gate-Drain “Miller” Charge --- 8 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.2 V Is Continuous Source Current --- --- --- 90 A AM 90N02-04D All d ata sheet.com
www.doingter.cn — 3 — lSM Pulsed Source Current --- -- 360 A trr --- 23 --- Qrr --- 10 --- Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) --- AM 90N02-04D All d ata sheet.com
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