AM82731 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 O C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 50 V BVCER IC = 2.0 mA 50 V ICES VCE = 2.0 mA 2.0 mA BVEBO IE = 1.0 mA 3.5 V hFE VCE = 5 V IC = 200 mA 10 --- PG ηC VCE = 30 V POUT = 3.0 W f = 2700 to 3100 MHz Pulse Width = 100 µS Duty Cycle = 10% 5.7 6.5 dB NPN RF POWER TRANSISTOR AM82731 DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE:

  • Input/Output Matching
  • Gold Metallization
  • Emitter Ballasting MAXIMUM RATINGS IC 0.9 A VCBO 50 V PDISS 27 W @ TC = 25 OC TJ -55 OC to+200 OC TSTG -55 OC to+200 OC θJC 6.5 OC/W PACKAGE STYLE 400 2L FLG 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER