AM82731-050 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 15 mA 55 V BVCER IC = 15 mA RBE = 10 Ω 55 V BVEBO IE = 2.0 mA 3.5 V ICES VCE = 40 V 10 mA hFE VCE = 5 V IC = 1.5 A 30 --- POUT ηC PG VCC = 40 V PIN = 12.5 W f = 2.7 to 3.1 GHz 6.0 6.5 W dB Note: Pulse Width = 100 μS Duty Cycle = 10% NPN RF POWER TRANSISTOR AM82731-050 DESCRIPTION: The AM82731-050 is a Common Base Device Designed for Pulsed S- Band Pulse output and driver Applications. FEATURES INCLUDE:
- Input/Output Matching
- Gold Metallization
- Emitter Ballasting MAXIMUM RATINGS IC 4.0 A VCC 46 V PDISS 100 W @ TC ≤ 50 °C TJ -65 °C to+250 °C TSTG -65 °C to+200 °C θJC 2.0 °C/W PACKAGE STYLE 400 2L FLG 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER