AM82731-003 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 50 V BVCER IC = 2.0 mA RBE = 10 Ω 50 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 30 V 2.0 mA hFE VCE = 5 V IC = 200 mA 10 --- POUT ηC PG VCE = 30 V PIN = 0.8 W f = 2.7 to 3.1 GHz 3.0 5.7 4.0 7.0 W dB Note: Pulse Width = 100 μS Duty Cycle = 10% NPN RF POWER TRANSISTOR AM82731-003 DESCRIPTION: The AM82731-003 is a Common Base Device Designed for Pulsed S- Band Radar Pulse Driver Applications. FEATURES INCLUDE:
- Input/Output Matching
- Gold Metallization
- Emitter Ballasting MAXIMUM RATINGS IC 0.9 A VCC 34 V PDISS 23 W @ TC = 25 °C TJ -65 °C to+250 °C TSTG -65 °C to+200 °C θJC 6.5 °C/W PACKAGE STYLE 400 2NL FLG MINIMUM inches / mm .100 / 2.54 .110 / 2.79 .376 / 9.55 .395 / 10.03 B C D E F G A MAXIMUM .396 / 10.06 .407 / 10.34 .130 / 3.30 inches / mm .450 / 11.43 H DIM K L I J .640 / 16.26 .890 / 22.61 .004 / 0.10 .660 / 16.76 .910 / 23.11 .007 / 0.18 H F C E N ØD M G 4x .062 x 45° P L K I J 2X B .025 x 45° A N M .193 / 4.90 .125 / 3.18 .395 / 10.03 .415 / 10.54 P .230 / 5.84 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER