AM81214-015 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 15 mA 48 V BVCER IC = 15 mA R BE = 10 Ω 48 V BVEBO IE = 1.5 mA 3.5 V ICES VCE = 28 V VBE = 28 V 1.5 mA hFE VCE = 5.0 V IC = 1.0 A 30 300 --- NPN SILICON RF POWER TRANSISTOR AM81214-015 DESCRIPTION: The ASI AM81214-015 is an NPN silicon bipolar transistor designed for L-Band pulsed radar applications. It utilizes internal matching and gold metalization for high reliability and good VSWR capability. FEATURES:
- 1.2 to 1.4 GHz operation
- Internal Input/Output Matching Network
- PG = 8.5 dB at 14.5 W/1400 MHz
- Omnigold™ Metalization System
- 5:1 VSWR capability rated at conditions MAXIMUM RATINGS IC 1.8 A VCC 32 V PDISS 37.5 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 4.0 °C/W PACKAGE STYLE .250 2L FLG Common Base
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
ERROR! REFERENCE SOURCE NOT FOUND. Specifications are subject to change without notice. AM81214-015 CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS PG ηC VCC = 28 V POUT = 15 W f = 1.2 to 1.4 GHz PIN = 2.0 W 8.5 dB Pulse width = 1000 µsec, Duty Cycle = 10% IMPEDANCE DATA FREQ ZIN (Ω) Z CL (Ω) 1.2 GHz 3.0 + j6.5 16 + j3.0 1.3 GHz 3.5 + j7.5 13 + j6.0 1.4 GHz 5.0 + j7.0 11 + j5.0