AM80912-015 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 55 V BVCER IC = 10 mA R BE = 10 Ω 55 V BVEBO IE = 1 mA 3.5 V ICES VCE = 28 V VBE = 0 V 2.0 mA hFE VCE = 5.0 V IC = 500 mA 15 150 --- PG ηηηηC VCC = 28 V POUT = 15 W f = 960 - 1215 MHz PIN = 2.3 W 8.1 8.9 dB Pulse format: 6.4 µsec on 6.6 µsec off, repeat for 3.3 ms, Then off for 4.5125 ms Duty Cycle: Burst 49.2%, overall 20.8% NPN SILICON RF POWER TRANSISTOR AM80912-015 DESCRIPTION: The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. FEATURES:

  • Internal Input/Output Matching Network
  • PG = 8.1 dB at 15 W/ 1215 MHz
  • Omnigold™ Metalization System
  • 28 V Operations
  • Common Base configuration MAXIMUM RATINGS IC 1.8 A VCC 32 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θθθθJC 3.0 °C/W PACKAGE STYLE .310 2L FLG MINIMUM inches / mm .100 / 2.54 .286 / 7.26 .306 / 7.77 B C D E F G A MAXIMUM .318 / 8.08 .306 / 7.77 inches / mm H DIM K L I J .552 / 14.02 .300 / 7.62 .572 / 14.53 .320 / 8.13 P N M .118 / 3.00 .003 / 0.08 .131 / 3.33 .006 / 0.15 .790 / 20.07 .810 / 20.57 .072 / 1.83 .148 / 3.76 .120 / 3.05 R .052 / 1.32 .230 / 5.84 .050 / 1.27 .400 / 10.16 .119 / 3.02 I G C D F Ø E N H 4x .062 x 45° R P M L J K 2 x B .040 x 45°A