AM4494N DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=12A,RDS(ON)<12mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current Continuous1) 12 A ID, pulse PulsedPulsed drain current2) 48 PD Power Dissipation3) 4 W EAS Single pulsed avalanche energy5) 65 mJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient4) 31 ℃/W G D D D DS1 S S AM4494N All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Drain-Source Leakage Current VDS=100V , VGS=0V, --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.5 --- 2.5 V RDS(ON) Static Drain-Source On Resistance2 VGS=10V,ID=12A --- 9.2 12 mΩ VGS=4.5V,ID=9A --- 12 16 mΩ Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 1900 --- pFCoss Output Capacitance --- 345 --- Crss Reverse Transfer Capacitance --- 10.2 --- Switching Characteristics td(on) Turn-On Delay Time --- --- ns tr Rise Time --- 4.5 --- ns td(off) Turn-Off Delay Time --- 44.3 --- ns tf Fall Time --- 8.5 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=10A --- 32.1 --- nC Qgs Gate-Source Charge --- 6.1 --- nC Qgd Gate-Drain Charge --- 8.1 --- nC Vplateau Gate plateau voltage --- 3.3 --- V Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=12A --- --- 1.3 V IS Continuous Source Current VGS<Vth --- --- 12 A VGS=10 V, VDS=50 V RG=2 Ω, ID=10 A 20.1 AM4494N All d ata sheet.com