AM4433P DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-8A,RDS(ON)<35mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -8 A Pulsed Drain Current1 -30 PD Power Dissipation 3.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient2 40 ℃/ W G D D D DS1 S S AM 4433P All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -30 -33 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-30V, TJ=25℃ --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.3 -1.65 -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-6.5A --- 30 35 mΩ VGS=-4.5V,ID=-5A --- 53 65 GFS Forward Transconductance VDS=-5V, ID=-6.5A 14 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 660 --- pF Coss Output Capacitance --- 100 --- Crss Reverse Transfer Capacitance --- 65 --- Switching Characteristics,4 td(on) Turn-On Delay Time VDS=-15V, VGS=-10V ID=-4A,RGEN=3Ω --- 7.5 --- ns tr Rise Time --- 5.5 --- ns td(off) Turn-Off Delay Time --- 19 --- ns tf Fall Time --- 7 --- ns Qg Total Gate Charge VDS=-15V , VGS=-10V , ID=-6.5A --- 9.2 --- nC Qgs Gate-Source Charge --- 1.6 --- nC Qgd Gate-Drain “Miller” Charge --- 2.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-8A, TJ=25℃ --- --- -1.2 V LS Diode Forward Current2 --- --- -8 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production AM 4433P All d ata sheet.com