AM1214-300 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. D
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 15 mA 3.0 V ICES VCE = 50 V 30 mA hFE VCE = 5.0 V IC = 5.0 A 10 --- --- PG ηC POUT VCC = 50 V PIN = 63 W f = 1235 to 1365 MHz 6.3 270 6.8 300 dB W Conditions: Pulse Width = 50 µS Duty Cycle = 4% NPN SILICON RF POWER TRANSISTOR AM1214-300 DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES:
- Internal Input/Output Matching Network
- Common Base
- PG = 6.5 db at 325 W/1400 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 18.75 A VCC 55 V PDISS 730 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.24 °C/W PACKAGE STYLE .400 2L FLG(A) MINIMUM inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 B C D E F G A MAXIMUM .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 H DIM K L I J .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 N M P .230 / 5.84 G C N 2xR 4x .062 x 45° I E P M F L H J K 2xB D .040 x 45°A .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. D ERROR! REFERENCE SOURCE NOT FOUND. Specifications are subject to change without notice. AM1214-300 FREQ ZIN (Ω) ZCL (Ω) 1235 MHz 2.5 + j5.0 2.0 – j2.5 1300 MHz 1.5 + j3.5 2.5 – j2.5 1365 MHz 1.0 + j3.5 2.0 – j3.0 TEST CIRCUIT