AM1011-075 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCER IC = 50 mA R BE = 10 Ω 65 V BVEBO IE = 4.0 mA 3.5 V ICES VCE = 50 V 6.0 mA hFE VCE = 5.0 V IC = 1.0 A 10 --- PG ηC VCC = 50 V PIN = 9.0 W f = 1090 MHz 9.2 9.7 dB Pulse Width = 32 µsec, Duty Cycle = 2% NPN SILICON RF POWER TRANSISTOR AM1011-075 DESCRIPTION: The ASI AM1011-075 is a high power Class C transistor designed for L-Band Avionics pulse output and driver applications. FEATURES:
- Internal Input/Output Matching Networks
- PG = 9.2 dB min. at 75 W/1090 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 5.4 A VCC 55 V PDISS 175 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.86 °C/W PACKAGE STYLE .400 2L FLG (A) MINIMUM inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 B C D E F G A MAXIMUM .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 H DIM K L I J .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 N M P .230 / 5.84 G C N 2xR 4x .062 x 45° I E P M F L H J K 2xB D .040 x 45°A .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11