AM0912-300 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCER IC = 50 mA R BE = 10 Ω 65 V BVEBO IE = 15 mA 3.0 V ICES VCB = 50 V 30 mA hFE VCE = 5.0 V I C = 5.0 A 10 --- POUT PG ηηηηC VCC = 50 V f = 960 to 1215 MHz PIN = 60 W Pulse Width = 10 µS Duty Cycle = 10% 300 7.0 330 7.4 W dB PACKAGE - .400 2L FLG(A) RF POWER TRANSISTOR AM0912-300 DESCRIPTION: The ASI AM0912-300 is a Common Base Transistor Designed for DME and TACAN Pulse Power Amplifier Applications. FEATURES INCLUDE:
- ••• Gold Metallization
- ••• Hermetic Package
- ••• Input/Output Matching MAXIMUM RATINGS IC 24 A VCC 50 V PDISS 940 W @ TC = ≤ 100 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θθθθJC 0.16 °C/W MINIMUM inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 B C D E F G A MAXIMUM .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 H DIM K L I J .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 N M P .230 / 5.84 G C N 2xR 4x .062 x 45° I E P M F L H J K 2xB D .040 x 45°A .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11
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