AM0912-150 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 60 mA 55 V BVCES IC = 100 mA 55 V BVEBO IE = 10 mA 3.5 V ICES VCB = 35 V 25 mA hFE VCE = 5.0 V I C = 5.0 A 20 --- POUT PG ηηηηC VCC = 35 V f = 960 to 1215 MHz PIN = 26.7 W 300 7.0 330 7.4 W dB PACKAGE - .400 X .500 2L FLG RF POWER TRANSISTOR AM0912-150 DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE:
- ••• Gold Metallization
- ••• Hermetic Package
- ••• Input/Output Matching MAXIMUM RATINGS IC 16.5 A VCC 35 V PDISS 300 W @ TC = ≤ 100 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θθθθJC 0.57 °C/W