AM0912-080 ASI | Alldatasheet
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Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 40 mA 65 V BVCER IC = 40 mA R BE = 10 Ω 65 V BVEBO IE = 10 mA 3.0 V ICBO VCB = 50 V 12 mA hFE VCE = 5 V I C = 2.0 A 20 120 --- POUT PG ηηηηC VCC = 50 V f = 960 to 1215 MHz PIN = 13 W Pulse Width = 10 µS Duty Cycle = 10% 8.4 100 W dB PACKAGE - .400 x .400 2NLFL 1 = COLLECTER 2 & 4 = BASE 3 = EMITTER RF POWER TRANSISTOR AM0912-080 DESCRIPTION: The ASI AM0912-080 is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE:
- ••• Gold Metallization
- ••• Hermetic Package
- ••• Input/Output Matching MAXIMUM RATINGS IC 7.0 A VCB 50 V PDISS 220 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +200 O C θθθθJC 0.80 O C/W
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/2
Specifications are subject to change without notice. AM0912-080