ALR200 ASI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 50 mA 70 V BV CES IC = 50 mA 70 V BV EBO IE = 30 mA 3.0 V ICES V CE = 40 V 30 mA h FE V CE = 5.0 V I C = 500 mA 10 --- --- P G ηηC V CC = 40 V P OUT = 200 W f = 1.2 to 1.4 GHz 7.0 dB NPN SILICON RF POWER TRANSISTOR ALR200 DESCRIPTION: The ASI ALR200 is Designed for FEATURES:
- Input Matching Network
- Omnigold ™ Metalization System MAXIMUM RATINGS IC 16 A V CC 40 V P DISS 575 W @ T C = 25 O C T J - 65 O C to +250 O C T STG - 65 O C to +200 O C θθJC 0.26 O C/W PACKAGE STYLE .400 2L FLG (A) ORDER CODE: ASI10515 MINIMUM inches / mm .100 / 2.54 .376 / 9.55 .050 / 1.27 .110 / 2.79 B C D E F G A MAXIMUM .120 / 3.05 .130 / 3.30 .396 / 10.06 inches / mm .193 / 4.90 H DIM K L I J .490 / 12.45 .690 / 17.53 .003 / 0.08 .510 / 12.95 .710 / 18.03 .006 / 0.18 N M P .230 / 5.84 G C N 2xR 4x .062 x 45° I E P M F L H J K 2xB D .040 x 45°A .100 / 2.54 .395 / 10.03 .407 / 10.34 .890 / 22.61 .910 / 23.11